Interaction of irradiation defect and solute H atoms in Zircaloy-4: An in-situ TEM observation under heavy ion irradiation

IF 5.6 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2025-09-26 DOI:10.1016/j.scriptamat.2025.117012

Huilong Yang , Yang Liu , Mingxu Gao , Dongyue Chen , Sho Kano , Kenta Murakami , Zhengcao Li , Hiroaki Abe

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Abstract

In-situ TEM observation under heavy ion irradiation was conducted with H-free and H-charged Zr-based alloy, to reveal the synergistic effects of irradiation and hydrogenation in nuclear fuel cladding materials. Experimental results showed two aspects regarding the interaction of irradiation defects and solute H atoms in Zr-based alloy. On the one hand, the density of irradiation defects in H-charged specimen is greater relative to H-free specimen. The nucleation of irradiation loops promoted by the solute H atoms is probably due to the formation of energetically stable vacancy- hydrogen complex. On the other hand, irradiation defects play an important role in the hydride re-precipitation during cooling. Re-precipitation of hydride was observed in the H-charged specimen without irradiation, which is however absent in the irradiated specimen. This is because acting as the new sites for H atoms, irradiation defects increase solid solubility of H in Zr and therefore suppress of hydride re-precipitation upon cooling.

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锆-4中辐照缺陷与溶质H原子的相互作用：重离子辐照下的原位透射电镜观察

采用无h和带电h的zr基合金进行重离子辐照下的原位透射电镜观察，揭示了辐照与核燃料包壳材料加氢的协同效应。实验结果表明，辐照缺陷与zr基合金中溶质H原子的相互作用有两个方面。一方面，带氢试样的辐照缺陷密度大于无氢试样。溶质H原子促进辐照环成核可能是由于形成了能量稳定的空位-氢络合物。另一方面，在冷却过程中，辐照缺陷对氢化物的再沉淀起着重要的作用。在没有辐照的情况下，在带h电荷的样品中观察到氢化物的再沉淀，而在辐照样品中则没有。这是因为辐照缺陷作为H原子的新位置，增加了H在Zr中的固溶度，从而抑制了冷却时氢化物的再沉淀。

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.