High throughput characterization method of electrical and phonon properties by dielectric resonant spectroscopy

Abstract

With the advancement of Materials Genome Initiative, there is an urgent need for nondestructive, rapid characterization methods for obtaining electrical transport properties and phonon information of materials. In this article, we develop a method using the dielectric resonant spectroscopies of materials to derive critical parameters such as conduction electron frequency, quantum relaxation time, and phonon frequency for metals and semiconductors. As a typical example, based on the new approaches, we realized simultaneous extraction of carrier concentration n and electron-phonon relaxation time ${\tau }_{e-p}$, and establish a new relationship of ${\tau }_{e-p}=C^{\ast }·T^{-1}·n^{-1/3}$ for n-type doped silicon, where the true electron-phonon coupling constant $C^{\ast }$ is proposed for the first time. This innovative methodology offers significant potential for high-throughput screening of materials, expediting the development of next-generation electronic devices.