Ultrahigh Modal Gain in Stripe Injection Lasers and Microlasers Based on InGaAs/GaAs Quantum Dots

Abstract

Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky–Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134–153 cm^–1) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm^–1 per quantum dot layer, which exceeds the values typical for conventional quantum-dot lasers by several times.