Asymptotic Stage of Self-Catalyzed Growth of III–V Nanowires by Molecular Beam Epitaxy

IF 0.9 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/S1063785023170066

V. G. Dubrovskii, M. V. Rylkova, A. S. Sokolovskii, Zh. V. Sokolova

引用次数: 0

Abstract—A new analytic theory is developed for asymptotic stage of self-catalyzed growth of III–V nanowires (NWs) by molecular beam epitaxy (MBE), where NWs collect all group III atoms deposited from vapor. The shadowing NW length is derived which corresponds for the full shadowing of the substrate surface in MBE. The NW length and radius are derived depending on the effective deposition thickness and MBE growth parameters. It is shown that the NW length increases, and their length decreases with decreasing the array pitch and increasing the V/III flux ratio.

Abstract Image

查看原文本刊更多论文

分子束外延自催化生长III-V纳米线的渐近阶段

摘要：本文提出了一种新的分析理论，用于研究分子束外延法（MBE）自催化生长III - v纳米线（NWs）的渐近阶段，NWs收集了从蒸汽中沉积的所有III族原子。导出了对应于MBE中衬底表面完全遮蔽的NW长度。NW长度和半径取决于有效沉积厚度和MBE生长参数。结果表明：随着阵列间距的减小和V/III磁通比的增大，NW长度增大，NW长度减小；

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.