Spatially Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing

Abstract

A post-fabrication method is demonstrated that enables spatially deterministic integration of hexagonal boron nitride (hBN) single-photon emitters onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto pre-fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub-microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser-written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second-order photon correlation measurements confirm its single-photon nature. Furthermore, on-chip excitation via the SiN waveguide is successfully achieved, demonstrating the compatibility of the approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with 2D material hybrid photonic devices.