Fabrication of praseodymium-doped cadmium selenide thin films for enhanced gas sensing applications

IF 6.8 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Science: Advanced Materials and Devices Pub Date : 2025-09-13 DOI:10.1016/j.jsamd.2025.100998

M. Dharani Devi , R. Bakiya Lakshmi , G. Nirexia Shree , Farhat S. Khan , Mohd Taukeer Khan , Sambasivam Sangaraju , Mohd Shkir

{"title":"Fabrication of praseodymium-doped cadmium selenide thin films for enhanced gas sensing applications","authors":"M. Dharani Devi , R. Bakiya Lakshmi , G. Nirexia Shree , Farhat S. Khan , Mohd Taukeer Khan , Sambasivam Sangaraju , Mohd Shkir","doi":"10.1016/j.jsamd.2025.100998","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, praseodymium (Pr) was doped into cadmium selenide (CdSe) thin films at concentrations of 0 %, 1 %, 2 %, 3 %, 4 %, and 5 %, and deposited onto glass substrates using the nebulizer spray pyrolysis (NSP) method. The structural, morphological, optical, and photoluminescence (PL) characteristics of the films were investigated. Structural analysis confirmed the crystalline nature and preferred orientation of all the deposited films. Optical studies revealed the interaction of the films with light, with the optical band gap (Eg) decreasing from 2,47 eV for pure CdSe to 2.15 eV for 5 % Pr-doped CdSe. The PL spectra of the as-deposited films showed high intensity in the visible region, with broad UV emission bands centered at 685 nm and 530 nm, respectively. Among the samples, the 3 % Pr-doped CdSe film demonstrated the highest responsivity and repeatability, which is attributed to a higher concentration of selenium vacancies that enhances charge carrier separation. Notably, the 3 % Pr-doped CdSe film exhibited the highest gas response of 259 at 250 ppm. These results suggest that 3 % Pr-doped CdSe is a promising candidate for gas sensing applications due to its superior performance characteristics.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 100998"},"PeriodicalIF":6.8000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science: Advanced Materials and Devices","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468217925001510","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

In this work, praseodymium (Pr) was doped into cadmium selenide (CdSe) thin films at concentrations of 0 %, 1 %, 2 %, 3 %, 4 %, and 5 %, and deposited onto glass substrates using the nebulizer spray pyrolysis (NSP) method. The structural, morphological, optical, and photoluminescence (PL) characteristics of the films were investigated. Structural analysis confirmed the crystalline nature and preferred orientation of all the deposited films. Optical studies revealed the interaction of the films with light, with the optical band gap (Eg) decreasing from 2,47 eV for pure CdSe to 2.15 eV for 5 % Pr-doped CdSe. The PL spectra of the as-deposited films showed high intensity in the visible region, with broad UV emission bands centered at 685 nm and 530 nm, respectively. Among the samples, the 3 % Pr-doped CdSe film demonstrated the highest responsivity and repeatability, which is attributed to a higher concentration of selenium vacancies that enhances charge carrier separation. Notably, the 3 % Pr-doped CdSe film exhibited the highest gas response of 259 at 250 ppm. These results suggest that 3 % Pr-doped CdSe is a promising candidate for gas sensing applications due to its superior performance characteristics.

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用于增强气敏应用的掺镨硒化镉薄膜的制备

在这项工作中，将镨（Pr）以0%、1%、2%、3%、4%和5%的浓度掺杂到硒化镉（CdSe）薄膜中，并使用雾化器喷雾热解（NSP）方法沉积在玻璃基板上。研究了薄膜的结构、形态、光学和光致发光特性。结构分析证实了所有沉积膜的结晶性质和择优取向。光学研究揭示了薄膜与光的相互作用，光学带隙（Eg）从纯CdSe的2,47 eV减小到掺5% pr的CdSe的2.15 eV。沉积膜的PL光谱在可见光区表现出较高的强度，紫外发射带较宽，分别以685 nm和530 nm为中心。在这些样品中，掺3% pr的CdSe薄膜表现出最高的响应率和重复性，这是由于更高浓度的硒空位促进了载流子的分离。值得注意的是，掺3% pr的CdSe薄膜在250 ppm时表现出最高的气体响应，为259。这些结果表明，由于其优越的性能特征，3%掺pr的CdSe是气敏应用的有希望的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

11.90

自引率

2.50%

发文量

审稿时长

47 days

期刊介绍： In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.