Photoluminescence of Porous Silicon Structures with Zinc Oxide Introduced by a Solution-Based Technique

Abstract

This work focuses on the photoluminescence of porous silicon (PS) structures modified with zinc oxide. The PS samples were prepared by electrochemical etching of single-crystal silicon wafers in a hydrofluoric acid solution. Zinc oxide was introduced into the pores using a solution-based pyrolysis method. An enhancement of photoluminescence in the visible range was observed in PS samples containing zinc oxide, along with differences in the photoluminescence spectra depending on the annealing conditions. The results show that visible photoluminescence can be generated and intensified by introducing zinc oxide into PS via a solution-based approach followed by annealing in air. Variation of the annealing temperature and duration in PS–ZnO heterostructures leads to the appearance of photoluminescence in the ultraviolet, blue, and green regions of the spectrum.