Enhanced electrochemical performance of ZnO modified by Y2O3 for application in supercapacitors

Chemistry of Inorganic Materials Pub Date : 2025-12-01 Epub Date: 2025-09-05 DOI:10.1016/j.cinorg.2025.100116
Madhu Gangwar , Sameer Khan , Ajay Kumar , Amit Kumar Chawla , Gagan Dixit
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Abstract

Zinc oxide (ZnO) is a non-toxic semiconductor known for its broad optical band gap and versatility in industrial and medical applications. This study explores the electrochemical properties of pure ZnO modified by making its composite with Y2O3. Three composite samples were prepared by adding 2 %, 5 %, and 8 % Y2O3 in pure ZnO. X-ray diffraction was used to characterize each sample for phase and structural investigation. The ZnO sample is found in its pure hexagonal phase, while the composites exhibit phases of both ZnO and Y2O3. Crystallite size calculations from XRD indicated that all samples are bulk in nature. Galvanostatic charging and discharging (GCD) curves at varying current densities, electrochemical impedance spectroscopy (EIS), and cyclic voltammetric study (CV) at various scan rates were used to investigate the electrochemical characteristics. CV plots of all samples show clear redox peaks and changes in capacitance with scan rate. The charge storage mechanism in all samples involves a mixture of double-layer capacitance and pseudocapacitive behaviour. According to the GCD curve, composites have higher specific capacitance than pure ZnO. The specific capacitance rises from 277 F/g to 449 F/g as the Y2O3 concentration is increased from 2 % to 5 % at a current density of 2A/g and for 8 % Y2O3 it becomes 467 F/g. Lower charge transfer resistance is demonstrated by ZnO after incorporation of 5 % and 8 % Y2O3, suggesting improved electrochemical stability and enhanced performance for supercapacitor applications.

Abstract Image

Y2O3改性ZnO在超级电容器中的应用
氧化锌(ZnO)是一种无毒半导体,以其宽光学带隙和多功能性而闻名于工业和医疗应用。研究了用Y2O3对纯ZnO进行复合改性后的电化学性能。在纯ZnO中分别添加2%、5%和8%的Y2O3制备了3种复合样品。采用x射线衍射对样品进行物相和结构表征。ZnO样品为纯六方相,而复合材料同时具有ZnO和Y2O3相。XRD计算表明,所有样品均为块状。采用不同电流密度下的恒流充放电(GCD)曲线、不同扫描速率下的电化学阻抗谱(EIS)和循环伏安法(CV)研究了其电化学特性。所有样品的CV图均显示出清晰的氧化还原峰和电容随扫描速率的变化。所有样品中的电荷存储机制都涉及双层电容和伪电容行为的混合。根据GCD曲线,复合材料比ZnO具有更高的比电容。当电流密度为2A/g时,当Y2O3浓度从2%增加到5%时,比电容从277 F/g增加到449 F/g,当Y2O3浓度为8%时,比电容变为467 F/g。在ZnO中掺入5%和8%的Y2O3后,ZnO的电荷转移电阻降低,表明其电化学稳定性得到改善,超级电容器的性能得到增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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