Dongying Wang , Shulan Pu , Yong Yang , Sijia Hu , Jin Zhong Zhang , Yan Sun
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引用次数: 0
Abstract
A g-C3N4 homojunction was fabricated by thermal etching a mixture of two bulk phases of g-C3N4 derived from various precursors in a 1:1 mass ratio. A larger specific surface area of 144.2 m2 g−1 was obtained and offered more reaction active sites for photocatalytic production of hydrogen peroxide (H2O2). Meanwhile, the built-in electric field formed by the homojunction structure facilitated the separation of charge carriers and prolonged lifetime, and the charge transfer pathway of g-C3N4 homojunction aligned with a type-Ⅱ heterojunction mode. Within 60 min, the H2O2 yield and tetracycline degradation efficiency of g-C3N4 homojunction reached 414.6 μM and 82.1%, respectively, which were significantly higher than those of the two bulk phases of g-C3N4. In addition, the photocatalytic reaction route of H2O2 production was confirmed as a continuous single-electron oxygen reduction reaction process. This study introduces a new way to practically apply g-C3N4-based materials in H2O2 synthesis
期刊介绍:
In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research.
Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science.
With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.