A. S. Mohamed, B. Gul, M. S. Khan, S. M. Aziz, H. Ahmad, F. Abbas
{"title":"Exploring the impact of chalcogen substitution in novel ternary chalcogenides: insight from first-principles investigation","authors":"A. S. Mohamed, B. Gul, M. S. Khan, S. M. Aziz, H. Ahmad, F. Abbas","doi":"10.1007/s12648-025-03572-6","DOIUrl":null,"url":null,"abstract":"<div><p>Rare-earth ternary materials have distinctive features such as excellent optical response and exceptional stability in their thermoelectric nature. The present study investigates the complex interaction between the structural, optoelectronic, and thermoelectric properties of the novel NdXF (X = S, Se) ternary semiconductors by employing the density functional theory. NdSF and NdSeF have predicted band gaps of 1.79 eV and 1.50 eV, respectively. The p states of both chalcogens play an important role in the bonding properties and electronic structure of these materials. These materials displayed metallic behavior, as evidenced by the negative values of ε<sub>1</sub><sup>xx</sup>(ω) and ε<sub>1</sub><sup>zz</sup>(ω). The reflectivity spectra increase gradually up to 4.0 eV, showing that these materials absorb more light as photon energy increases. The thermoelectric properties were also investigated, such as the thermal conductivity, Figure of Merit, electrical conductivity, and Seebeck coefficient. The current study could demonstrate its potential application in advanced optoelectronic devices, paving the path for a wide variety of innovations.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"99 10","pages":"3643 - 3655"},"PeriodicalIF":1.7000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s12648-025-03572-6","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Rare-earth ternary materials have distinctive features such as excellent optical response and exceptional stability in their thermoelectric nature. The present study investigates the complex interaction between the structural, optoelectronic, and thermoelectric properties of the novel NdXF (X = S, Se) ternary semiconductors by employing the density functional theory. NdSF and NdSeF have predicted band gaps of 1.79 eV and 1.50 eV, respectively. The p states of both chalcogens play an important role in the bonding properties and electronic structure of these materials. These materials displayed metallic behavior, as evidenced by the negative values of ε1xx(ω) and ε1zz(ω). The reflectivity spectra increase gradually up to 4.0 eV, showing that these materials absorb more light as photon energy increases. The thermoelectric properties were also investigated, such as the thermal conductivity, Figure of Merit, electrical conductivity, and Seebeck coefficient. The current study could demonstrate its potential application in advanced optoelectronic devices, paving the path for a wide variety of innovations.
期刊介绍:
Indian Journal of Physics is a monthly research journal in English published by the Indian Association for the Cultivation of Sciences in collaboration with the Indian Physical Society. The journal publishes refereed papers covering current research in Physics in the following category: Astrophysics, Atmospheric and Space physics; Atomic & Molecular Physics; Biophysics; Condensed Matter & Materials Physics; General & Interdisciplinary Physics; Nonlinear dynamics & Complex Systems; Nuclear Physics; Optics and Spectroscopy; Particle Physics; Plasma Physics; Relativity & Cosmology; Statistical Physics.