Commensurate Palladium Adlayer Formation on 2H-MoS2(0001)

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL
Wai Kiat Chin*, Takashi Komesu, Bushra Ashraf, Yogendra Kumar, Yudai Miyai, Amit Kumar, Duy Le, Eike F. Schwier, Shin-ichiro Ideta, Talat S. Rahman*, Kenya Shimada and Peter A. Dowben*, 
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Abstract

Palladium (Pd) adlayers on 2H-MoS2(0001) were found, by low energy electron diffraction, to adopt the 3.16 Å lattice constant of the 2H-MoS2(0001) substrate, which has the Pd–Pd spacing vastly expanded from the natural in-plane spacing of 2.75 Å. This vastly expanded Pd–Pd in-plane spacing persists to a Pd overlayer thickness of at least 20 Å without any evidence of surface reconstruction or faceting. In addition, the occupied and unoccupied electronic band structures of the Pd overlayer on the 2H-MoS2(0001) substrate have been characterized by both angle-resolved photoemission spectroscopy (ARPES) inverse photoemission spectroscopy (IPES) and density functional theory (DFT) based calculations. The results indicate that the Pd adlayer interacts strongly with the 2H-MoS2(0001) substrate. In fact, this interaction of Pd with the MoS2(0001) substrate is sufficiently strong to negate any meaningful application of a simple Schottky barrier interface scheme. This fact is evident from the combination of both the photoemission and inverse photoemission, which indicate there is an increase of 2H-MoS2(0001) substrate band gap with increasing Pd overlayer thickness, at the Γ̅ point (the center of the Brillouin zone). As a result of such strong interactions between the Pd adlayer and MoS2(0001) substrate, a considerable amount of Pd must be added (at least 2 monolayers) before the emergence of the Pd 4d band structure. The emergence of Pd adlayer band structure is most readily apparent at the Γ̅ point and is consistent with DFT calculations.

Abstract Image

在2H-MoS2上形成相应的钯层(0001)
通过低能电子衍射发现,2H-MoS2(0001)衬底上的钯(Pd)衬底晶格常数为3.16 Å,其Pd - Pd间距从自然的平面内间距2.75 Å大大扩大。这种大幅扩大的Pd - Pd面内间距持续到Pd覆盖层厚度至少为20 Å,没有任何表面重建或面形的证据。此外,利用角分辨光导光谱(ARPES)、逆光导光谱(IPES)和基于密度泛函理论(DFT)的计算对2H-MoS2(0001)衬底上Pd覆盖层的占据和未占据电子带结构进行了表征。结果表明,Pd贴片与2H-MoS2(0001)衬底相互作用强烈。事实上,Pd与MoS2(0001)衬底的这种相互作用足够强,从而否定了简单肖特基势垒界面方案的任何有意义的应用。这一事实从光发射和逆光发射的组合中可以明显看出,在Γ点(布里渊区中心),随着Pd覆盖层厚度的增加,2H-MoS2(0001)衬底带隙增加。由于Pd衬底与MoS2(0001)衬底之间的强烈相互作用,在Pd 4d带结构出现之前,必须添加相当数量的Pd(至少2层单层)。Pd层带结构的出现在Γ点最明显,与DFT计算结果一致。
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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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