Atomic topology of highly mobile Type I and supermobile Type II twin boundaries in 10M Ni–Mn–Ga single crystal

IF 5.6 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2025-08-12 DOI:10.1016/j.scriptamat.2025.116920

Ladislav Straka , Marek Vronka , Jan Maňák , Petr Veřtát , Hanuš Seiner , Oleg Heczko

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Abstract

The atomic topology of individual, highly mobile Type I and Type II twin boundaries in 10M Ni–Mn–Ga martensite was investigated by transmission electron microscopy (TEM). The twin boundaries established in a bulk single crystal showed twinning stresses of ∼1 MPa for Type I and ∼0.1 MPa for Type II. TEM lamellae with a (010) cross-section and the c-axis (easy-magnetization direction) lying in-plane were prepared by focused ion-beam milling, each containing a single twin boundary of specific type. High-resolution TEM confirmed an atomically sharp Type I twin boundary oriented along the rational (101) plane. The Type II boundary was also atomically sharp, apart from occasional single-atomic-plane steps, contrasting with previous suggestions of its diffuse nature. These findings provide the first direct atomic-scale comparison of both boundary types and offer critical structural insight into the origin of supermobility in Type II twin boundaries.

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10M Ni-Mn-Ga单晶高迁移型I型和超迁移型II型孪晶界的原子拓扑结构

利用透射电子显微镜（TEM）研究了10M Ni-Mn-Ga马氏体中单个高迁移I型和II型孪晶界的原子拓扑结构。在块状单晶中建立的孪晶边界显示，I型孪晶应力为~ 1 MPa， II型孪晶应力为~ 0.1 MPa。通过聚焦离子束铣削制备了截面为（010）、c轴（易磁化方向）在平面内的TEM片层，每个片层包含单个特定类型的孪晶边界。高分辨率透射电镜证实了沿有理（101）面取向的原子锐I型孪晶界。II型边界在原子层面上也是尖锐的，除了偶尔出现的单原子平面台阶，这与之前认为的扩散性质形成了鲜明对比。这些发现首次提供了两种边界类型的直接原子尺度比较，并为II型孪晶界超迁移的起源提供了关键的结构见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.