Eunkyo Ju, May Angelu Madarang, Yeonhwa Kim, Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, In-Hwan Lee and Daehwan Jung*,
{"title":"High Tunneling Current and Thermally Stable AlGaAs Tunnel Junctions Enabled by Hybrid Delta Doping for III–V/Si Epitaxial Tandem Cells","authors":"Eunkyo Ju, May Angelu Madarang, Yeonhwa Kim, Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, In-Hwan Lee and Daehwan Jung*, ","doi":"10.1021/acsaem.5c01026","DOIUrl":null,"url":null,"abstract":"<p >Thermally stable III–V tunnel junctions (TJs) with a high tunneling current are essential for integrating III–V/Si tandem solar cells via epitaxial growth. Here, we present TJs based on 1.55–1.65 eV AlGaAs materials utilizing a Si:GaAs quantum well (QW) layer delta-doped with two different dopants, Si or Te. The hybrid delta doping structure, which is formed by the incorporation of Te as a delta doping species, boosts tunneling currents as well as improves thermal stability after annealing at 600 °C for 90 min by minimizing several Te-related issues such as delayed incorporation, the memory effect, and even the Si amphoteric effect. Moreover, 1.65 eV AlGaAs solar cells are successfully demonstrated when grown with a hybrid delta-doped AlGaAs TJ. This study shows that the hybrid delta doping technique is a simple but powerful method to improve both the TJ performance and thermal stability for advanced III–V/Si tandem solar cells.</p>","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":"8 15","pages":"10921–10927"},"PeriodicalIF":5.5000,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaem.5c01026","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Thermally stable III–V tunnel junctions (TJs) with a high tunneling current are essential for integrating III–V/Si tandem solar cells via epitaxial growth. Here, we present TJs based on 1.55–1.65 eV AlGaAs materials utilizing a Si:GaAs quantum well (QW) layer delta-doped with two different dopants, Si or Te. The hybrid delta doping structure, which is formed by the incorporation of Te as a delta doping species, boosts tunneling currents as well as improves thermal stability after annealing at 600 °C for 90 min by minimizing several Te-related issues such as delayed incorporation, the memory effect, and even the Si amphoteric effect. Moreover, 1.65 eV AlGaAs solar cells are successfully demonstrated when grown with a hybrid delta-doped AlGaAs TJ. This study shows that the hybrid delta doping technique is a simple but powerful method to improve both the TJ performance and thermal stability for advanced III–V/Si tandem solar cells.
具有高隧道电流的热稳定III-V隧道结(TJs)是通过外延生长集成III-V /Si串联太阳能电池所必需的。在这里,我们提出了基于1.55-1.65 eV AlGaAs材料的TJs,利用Si:GaAs量子阱(QW)层掺杂两种不同的掺杂剂Si或Te。掺杂Te形成的杂化δ掺杂结构,在600°C下退火90 min后,通过最小化与Te相关的延迟掺杂、记忆效应甚至Si两性效应等问题,增加了隧道电流,提高了热稳定性。此外,在杂化δ掺杂AlGaAs TJ中生长的1.65 eV AlGaAs太阳能电池也得到了成功的验证。该研究表明,杂化δ掺杂技术是一种简单而有效的方法,可以提高先进III-V /Si串联太阳能电池的TJ性能和热稳定性。
期刊介绍:
ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.