High Tunneling Current and Thermally Stable AlGaAs Tunnel Junctions Enabled by Hybrid Delta Doping for III–V/Si Epitaxial Tandem Cells

IF 5.5 3区 材料科学 Q2 CHEMISTRY, PHYSICAL
Eunkyo Ju, May Angelu Madarang, Yeonhwa Kim, Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, In-Hwan Lee and Daehwan Jung*, 
{"title":"High Tunneling Current and Thermally Stable AlGaAs Tunnel Junctions Enabled by Hybrid Delta Doping for III–V/Si Epitaxial Tandem Cells","authors":"Eunkyo Ju,&nbsp;May Angelu Madarang,&nbsp;Yeonhwa Kim,&nbsp;Rafael Jumar Chu,&nbsp;Tsimafei Laryn,&nbsp;Won Jun Choi,&nbsp;In-Hwan Lee and Daehwan Jung*,&nbsp;","doi":"10.1021/acsaem.5c01026","DOIUrl":null,"url":null,"abstract":"<p >Thermally stable III–V tunnel junctions (TJs) with a high tunneling current are essential for integrating III–V/Si tandem solar cells via epitaxial growth. Here, we present TJs based on 1.55–1.65 eV AlGaAs materials utilizing a Si:GaAs quantum well (QW) layer delta-doped with two different dopants, Si or Te. The hybrid delta doping structure, which is formed by the incorporation of Te as a delta doping species, boosts tunneling currents as well as improves thermal stability after annealing at 600 °C for 90 min by minimizing several Te-related issues such as delayed incorporation, the memory effect, and even the Si amphoteric effect. Moreover, 1.65 eV AlGaAs solar cells are successfully demonstrated when grown with a hybrid delta-doped AlGaAs TJ. This study shows that the hybrid delta doping technique is a simple but powerful method to improve both the TJ performance and thermal stability for advanced III–V/Si tandem solar cells.</p>","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":"8 15","pages":"10921–10927"},"PeriodicalIF":5.5000,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaem.5c01026","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Thermally stable III–V tunnel junctions (TJs) with a high tunneling current are essential for integrating III–V/Si tandem solar cells via epitaxial growth. Here, we present TJs based on 1.55–1.65 eV AlGaAs materials utilizing a Si:GaAs quantum well (QW) layer delta-doped with two different dopants, Si or Te. The hybrid delta doping structure, which is formed by the incorporation of Te as a delta doping species, boosts tunneling currents as well as improves thermal stability after annealing at 600 °C for 90 min by minimizing several Te-related issues such as delayed incorporation, the memory effect, and even the Si amphoteric effect. Moreover, 1.65 eV AlGaAs solar cells are successfully demonstrated when grown with a hybrid delta-doped AlGaAs TJ. This study shows that the hybrid delta doping technique is a simple but powerful method to improve both the TJ performance and thermal stability for advanced III–V/Si tandem solar cells.

Abstract Image

杂化δ掺杂制备III-V /Si外延串联电池的高隧道电流和热稳定AlGaAs隧道结
具有高隧道电流的热稳定III-V隧道结(TJs)是通过外延生长集成III-V /Si串联太阳能电池所必需的。在这里,我们提出了基于1.55-1.65 eV AlGaAs材料的TJs,利用Si:GaAs量子阱(QW)层掺杂两种不同的掺杂剂Si或Te。掺杂Te形成的杂化δ掺杂结构,在600°C下退火90 min后,通过最小化与Te相关的延迟掺杂、记忆效应甚至Si两性效应等问题,增加了隧道电流,提高了热稳定性。此外,在杂化δ掺杂AlGaAs TJ中生长的1.65 eV AlGaAs太阳能电池也得到了成功的验证。该研究表明,杂化δ掺杂技术是一种简单而有效的方法,可以提高先进III-V /Si串联太阳能电池的TJ性能和热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
ACS Applied Energy Materials
ACS Applied Energy Materials Materials Science-Materials Chemistry
CiteScore
10.30
自引率
6.20%
发文量
1368
期刊介绍: ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信