Effect of electric field on excitons in wide quantum wells

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-07-30 DOI:10.1016/j.physe.2025.116333

Shiming Zheng, E.S. Khramtsov, I.V. Ignatiev

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Abstract

A microscopic model of a heterostructure with a quantum well (QW) is proposed to study exciton properties in an external electric field. The effect of an electric field ranging from 0 to 6 kV/cm applied to a GaAs/AlGaAs QW structure in the growth direction is studied for several QWs of various widths up to 100 nm. The three-dimensional Schrödinger equation (SE) for the exciton is numerically solved using the finite difference method. Wave functions and energies of several states of the heavy-hole and light-hole excitons are calculated. The dependencies of exciton state energy, binding energy, radiative broadening, and static dipole moment on the applied electric field are determined. Additionally, the threshold for exciton dissociation in the 100-nm QW is established. Furthermore, we calculate an electric-field-induced shift in the center of mass of heavy-hole and light-hole excitons in the QWs. Finally, we simulate the reflection spectra of heterostructures with GaAs/AlGaAs QWs under an electric field using the calculated energies, radiative broadenings, and phases of exciton resonances.

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电场对宽量子阱中激子的影响

提出了一种具有量子阱的异质结构的微观模型，用于研究外电场下激子的性质。研究了在生长方向上施加0 ~ 6kv /cm的电场对GaAs/AlGaAs量子阱结构的影响。利用有限差分法对激子的三维Schrödinger方程（SE）进行了数值求解。计算了重空穴和轻空穴激子若干态的波函数和能量。确定了激子态能、结合能、辐射展宽和静态偶极矩对外加电场的依赖关系。此外，还建立了100 nm量子阱中激子解离的阈值。此外，我们计算了量子阱中重空穴和轻空穴激子的电场引起的质心位移。最后，我们利用计算得到的能量、辐射宽度和激子共振相位，模拟了电场作用下GaAs/AlGaAs量子阱异质结构的反射光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures