Magnetic excitations and absence of charge order in the van der Waals ferromagnet Fe4.75GeTe2

IF 6.2 1区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
V. K. Bhartiya, T. Kim, J. Li, T. P. Darlington, D. J. Rizzo, Y. Gu, S. Fan, C. Nelson, J. W. Freeland, X. Xu, D. N. Basov, J. Pelliciari, A. F. May, C. Mazzoli, V. Bisogni
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Abstract

Understanding the ground state of van der Waals (vdW) magnets is crucial for designing devices leveraging these platforms. Here, we investigate the magnetic excitations and charge order in Fe4.75GeTe2, a vdW ferromagnet with ≈ 315 K Curie temperature. Using Fe L3-edge resonant inelastic X-ray scattering, we observe a dual nature of magnetic excitations, comprising a coherent magnon and a broad non-dispersive continuum extending up to 150 meV, 50% higher than in Fe2.72GeTe2. The continuum intensity is sinusoidally modulated along the stacking direction L, with a period matching the inter-slab distance. Our results indicate that while the dual character of the magnetic excitations is generic to Fe-Ge-Te vdW magnets, Fe4.75GeTe2exhibits a longer out-of-plane magnetic correlation length, suggesting enhanced 3D magnetic character. Furthermore, resonant X-ray diffraction reveals that previously reported ±(1/3, 1/3, L) peaks originate from crystal structure rather than from charge order.

Abstract Image

范德华铁磁体Fe4.75GeTe2的磁激发与荷序缺失
了解范德华(vdW)磁体的基态对于设计利用这些平台的设备至关重要。本文研究了居里温度为≈315 K的vdW铁磁体Fe4.75GeTe2的磁激发和电荷顺序。利用Fe l3边缘共振非弹性x射线散射,我们观察到磁激发的双重性质,包括相干磁振子和宽的非色散连续体,延伸到150 meV,比Fe2.72GeTe2高50%。连续介质强度沿叠加方向L正弦调制,周期与板间距离相匹配。结果表明,Fe-Ge-Te vdW磁体具有双重磁激励特征,而fe4.75 gete2具有较长的面外磁相关长度,表明其三维磁特性增强。此外,共振x射线衍射表明,先前报道的±(1/3,1/3,L)峰来自晶体结构,而不是电荷顺序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
npj Quantum Materials
npj Quantum Materials Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
10.60
自引率
3.50%
发文量
107
审稿时长
6 weeks
期刊介绍: npj Quantum Materials is an open access journal that publishes works that significantly advance the understanding of quantum materials, including their fundamental properties, fabrication and applications.
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