Nonconventional Luminescence of Halogenated Silanes: Mechanistic Insight.

IF 2.9 2区 化学 Q3 CHEMISTRY, PHYSICAL
The Journal of Physical Chemistry B Pub Date : 2025-07-31 Epub Date: 2025-07-18 DOI:10.1021/acs.jpcb.5c03897
Xiangxi Zhang, Feng Jin, Xintong Li, Jun Wang, Qing Zhou, LingminYi
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Abstract

In this study, the luminescence properties and emission mechanisms of five halogenated silanes, hexamethyldisiloxane (HT), chloromethylsilane (CT), iodomethylsilane (IT), chlorosilane (CS), and 1H,1H,2H,2H-perfluorooctyltrimethoxysilane (FS) are systematically investigated. The effects of halogen type, substitution position, and temperature on luminescence efficiency, Stokes shift, and phosphorescence lifetime are elucidated through fluorescence, phosphorescence analysis, and theoretical calculations (at room temperature and 77 K). The results revealed that CS exhibits excellent fluorescence emission at 365 nm and significantly prolonged low-temperature phosphorescence lifetime due to its reduced nonradiative transitions and minimized excited-state energy dissipation. IT exhibited enhanced phosphorescence under liquid nitrogen, which can be attributed to the heavy-atom effect of the iodine atom and strong spin-orbit coupling. The Stokes shift analysis of excitation-emission spectra demonstrated that the energy gap between the excited and ground states can be reduced by the substituted halogen atoms. Moreover, CS displays the smallest shift among the five halogenated silanes, and its maximum emission wavelength is red-shifted with induced temperature, reflecting increased energy dissipation. The electron-hole distribution analysis confirms that halogens regulate luminescence efficiency by modulating electron transfer pathways (from high-electronegativity atoms to low-electronegativity regions) and spin-coupling strength. This work not only enriches the understanding of nonconventional luminescence in pure liquids but also provides theoretical foundations for the design of high-performance silicon-based optoelectronic materials.

卤化硅烷的非常规发光:机理洞察。
本研究系统地研究了六甲基二硅氧烷(HT)、氯甲基硅烷(CT)、碘甲基硅烷(IT)、氯硅烷(CS)和1H、1H、2H、2H-全氟辛基三甲氧基硅烷(FS)五种卤化硅烷的发光特性和发射机理。通过荧光、磷光分析和理论计算(室温和77 K)阐明了卤素类型、取代位置和温度对发光效率、斯托克斯位移和磷光寿命的影响。结果表明,CS在365 nm处具有优异的荧光发射性能,并且由于其减少了非辐射跃迁和最小化了激发态能量耗散,显著延长了低温磷光寿命。它在液氮下表现出增强的磷光,这可归因于碘原子的重原子效应和强自旋轨道耦合。激发-发射光谱的Stokes位移分析表明,取代卤素原子可以减小激发态和基态之间的能隙。此外,CS在5种卤化硅烷中位移最小,其最大发射波长随诱导温度发生红移,反映出能量耗散增加。电子-空穴分布分析证实,卤素通过调节电子从高电负性原子到低电负性区域的转移途径和自旋耦合强度来调节发光效率。这项工作不仅丰富了对纯液体中非常规发光的认识,而且为高性能硅基光电材料的设计提供了理论基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.80
自引率
9.10%
发文量
965
审稿时长
1.6 months
期刊介绍: An essential criterion for acceptance of research articles in the journal is that they provide new physical insight. Please refer to the New Physical Insights virtual issue on what constitutes new physical insight. Manuscripts that are essentially reporting data or applications of data are, in general, not suitable for publication in JPC B.
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