Yongzuo Wang , Ping Ma , Peng Chen, Xiaolin Li, Zhongjie Yan, Cunxu Gao
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引用次数: 0
Abstract
Benefiting from the advantages of antiferromagnets, such as external-field robustness, ultrafast dynamics, and stray-field-free characteristics, spin-dependent effects in antiferromagnets have garnered extensive attention. Here we report the observation of a spin-valve-like magnetoresistance in epitaxial prototype antiferromagnet FexMn100-x thin films, arising from spin-dependent scattering at interfaces between ferromagnetic clusters and the antiferromagnetic background. This magnetoresistance persists at room temperature and withstands magnetic field up to 70 kOe, owing to the pinning effect from the antiferromagnetic background. In contrast to conventional understanding that focuses on antisite disorder, our studies reveal that this phenomenon emerges only in nonstoichiometric FexMn100-x, while disappearing completely in the equiatomic Fe50Mn50 films. Our results provide opportunities for tailoring spin-dependent transport in antiferromagnets through precise composition control.
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The Journal of Magnetism and Magnetic Materials provides an important forum for the disclosure and discussion of original contributions covering the whole spectrum of topics, from basic magnetism to the technology and applications of magnetic materials. The journal encourages greater interaction between the basic and applied sub-disciplines of magnetism with comprehensive review articles, in addition to full-length contributions. In addition, other categories of contributions are welcome, including Critical Focused issues, Current Perspectives and Outreach to the General Public.
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