High-Performance Backplanes are Getting a Technology Refresh

Q4 Engineering
Radu A. Sporea
{"title":"High-Performance Backplanes are Getting a Technology Refresh","authors":"Radu A. Sporea","doi":"10.1002/msid.1592","DOIUrl":null,"url":null,"abstract":"<p><b>THIS ISSUE WILL LAUNCH AN ARTICLE SERIES ON BACKPLANE</b> technologies, beginning with a focus close to home: our team's work on multimodal transistor (MMT) technology. This first installment also sets the stage with an overview of the diverse landscape of thin-film transistors (TFTs) used in displays. Future issues will explore high-performance oxide semiconductors, the history and promise of organic TFTs, recent developments in low-temperature polycrystalline silicon (LTPS) as a standalone or in conjunction with oxides (LTPO), a summary of issues arising from the case studies of TFT developments, and a startup spotlight that includes a recap of lessons learned.</p><p>Having spent two decades developing TFTs and working on low-cost, high-value analog complementary metal-oxide-semiconductor (CMOS) applications prior, it is clear that while every technology has intrinsic limits, those boundaries often are shaped as much by mindset as by materials. The magic often lies not in radical overhauls, but in holistic, application-driven co-design: clever engineering that plays to a technology's strengths and edges it beyond perceived constraints.</p><p>Go to any conference in the field, and you inevitably will see presentations with tables weighing the pros and cons of various backplane or TFT technologies. While useful, these comparisons can inadvertently box us in, reinforcing assumptions that stifle or delay innovation. In reality, breakthroughs often emerge from unconventional thinking that tweaks and reimagines what is practical at the boundaries through process-device-circuit co-optimization.</p><p>This series focuses on that mindset. It challenges what we take for granted and how context-aware innovation can unlock surprising performance.</p><p>I invite you to engage with the authors; bring your perspectives on current developments, hopes for the future of our field, and lessons from history. Let's explore how the community can push these technologies forward with scientific creativity and engineering flair.</p>","PeriodicalId":52450,"journal":{"name":"Information Display","volume":"41 4","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/msid.1592","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Information Display","FirstCategoryId":"1085","ListUrlMain":"https://sid.onlinelibrary.wiley.com/doi/10.1002/msid.1592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

Abstract

THIS ISSUE WILL LAUNCH AN ARTICLE SERIES ON BACKPLANE technologies, beginning with a focus close to home: our team's work on multimodal transistor (MMT) technology. This first installment also sets the stage with an overview of the diverse landscape of thin-film transistors (TFTs) used in displays. Future issues will explore high-performance oxide semiconductors, the history and promise of organic TFTs, recent developments in low-temperature polycrystalline silicon (LTPS) as a standalone or in conjunction with oxides (LTPO), a summary of issues arising from the case studies of TFT developments, and a startup spotlight that includes a recap of lessons learned.

Having spent two decades developing TFTs and working on low-cost, high-value analog complementary metal-oxide-semiconductor (CMOS) applications prior, it is clear that while every technology has intrinsic limits, those boundaries often are shaped as much by mindset as by materials. The magic often lies not in radical overhauls, but in holistic, application-driven co-design: clever engineering that plays to a technology's strengths and edges it beyond perceived constraints.

Go to any conference in the field, and you inevitably will see presentations with tables weighing the pros and cons of various backplane or TFT technologies. While useful, these comparisons can inadvertently box us in, reinforcing assumptions that stifle or delay innovation. In reality, breakthroughs often emerge from unconventional thinking that tweaks and reimagines what is practical at the boundaries through process-device-circuit co-optimization.

This series focuses on that mindset. It challenges what we take for granted and how context-aware innovation can unlock surprising performance.

I invite you to engage with the authors; bring your perspectives on current developments, hopes for the future of our field, and lessons from history. Let's explore how the community can push these technologies forward with scientific creativity and engineering flair.

Abstract Image

Abstract Image

Abstract Image

高性能背板正在获得技术更新
本刊将推出一个关于背板技术的系列文章,从一个重点开始:我们的团队在多模态晶体管(MMT)技术上的工作。第一部分还概述了用于显示器的薄膜晶体管(tft)的各种前景。未来的问题将探讨高性能氧化物半导体,有机TFT的历史和前景,低温多晶硅(LTPS)作为一个独立的或与氧化物(LTPO)结合的最新发展,TFT发展案例研究中出现的问题的总结,以及一个创业焦点,包括总结经验教训。我们花了20年的时间开发tft,并致力于低成本、高价值的模拟互补金属氧化物半导体(CMOS)应用,很明显,虽然每种技术都有内在的局限性,但这些界限往往是由思维方式和材料决定的。神奇之处往往不在于彻底的改革,而在于整体的、应用驱动的协同设计:巧妙的工程设计发挥了一项技术的优势,并使其超越了感知到的限制。在该领域的任何会议上,您都不可避免地会看到用表格衡量各种背板或TFT技术的利弊。这些比较虽然有用,但可能会在不经意间把我们困住,强化扼杀或延迟创新的假设。在现实中,突破往往来自非常规思维,即通过工艺-设备-电路协同优化来调整和重新想象在边界上可行的东西。本系列关注的是这种心态。它挑战了我们认为理所当然的东西,以及情境感知创新如何开启令人惊讶的表现。我邀请你们与作者互动;带来你对当前发展的看法,对我们领域未来的希望,以及历史的教训。让我们一起探索社会如何以科学创造力和工程天赋推动这些技术向前发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Information Display
Information Display Engineering-Electrical and Electronic Engineering
CiteScore
1.40
自引率
0.00%
发文量
85
期刊介绍: Information Display Magazine invites other opinions on editorials or other subjects from members of the international display community. We welcome your comments and suggestions.
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