High-efficiency modification mechanism of GaN(0001) in plasma-assisted polishing using hydrogen plasma

IF 3.2 3区工程技术 Q2 ENGINEERING, INDUSTRIAL

Cirp Annals-Manufacturing Technology Pub Date : 2025-01-01 DOI:10.1016/j.cirp.2025.03.045

Tong Tao, Rongyan Sun, Yuji Ohkubo, Kazuya Yamamura (2)

引用次数: 0

Abstract

Gallium nitride (GaN) is a promising material for high-power, high-frequency electronic devices. Plasma-assisted polishing (PAP) process achieved high-quality surface polishing of GaN by combining plasma modification with the removal of modified layer using soft abrasives. In PAP, the modification rate directly determines the overall PAP efficiency. This study replaced traditional oxidative plasma with vacuum H₂ plasma, which has a smaller atomic diameter and reducing properties, to improve modification efficiency. By thoroughly investigating the mechanism of H₂ plasma modification on GaN surface and optimizing the relevant process parameters, efficient and controllable GaN surface modification was achieved while suppressing surface roughness deterioration.

查看原文本刊更多论文

氢等离子体等离子体辅助抛光中氮化镓（0001）的高效修饰机理

氮化镓（GaN）是一种很有前途的高功率、高频电子器件材料。等离子体辅助抛光（PAP）工艺将等离子体修饰与软磨料去除修饰层相结合，实现了高质量的氮化镓表面抛光。在PAP中，改性率直接决定了PAP的整体效率。本研究用原子直径更小、还原性更强的真空h2等离子体取代了传统的氧化等离子体，提高了改性效率。通过深入研究h2等离子体修饰GaN表面的机理，优化相关工艺参数，在抑制表面粗糙度恶化的同时，实现了高效可控的GaN表面修饰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Cirp Annals-Manufacturing Technology 工程技术-工程：工业

CiteScore

7.50

自引率

9.80%

发文量

137

审稿时长

13.5 months

期刊介绍： CIRP, The International Academy for Production Engineering, was founded in 1951 to promote, by scientific research, the development of all aspects of manufacturing technology covering the optimization, control and management of processes, machines and systems. This biannual ISI cited journal contains approximately 140 refereed technical and keynote papers. Subject areas covered include: Assembly, Cutting, Design, Electro-Physical and Chemical Processes, Forming, Abrasive processes, Surfaces, Machines, Production Systems and Organizations, Precision Engineering and Metrology, Life-Cycle Engineering, Microsystems Technology (MST), Nanotechnology.