Mayora Varshney , Aditya Sharma , Jai Parkash , B.H. Lee , K.H. Chae , S.O. Won
{"title":"Effect of annealing temperature on electronic structure and luminescence properties of Zn:SnO2 thin films","authors":"Mayora Varshney , Aditya Sharma , Jai Parkash , B.H. Lee , K.H. Chae , S.O. Won","doi":"10.1016/j.cplett.2025.142285","DOIUrl":null,"url":null,"abstract":"<div><div>Connections among the metal‑oxygen octahedra distortions, electronic structure perturbation and origin of photoluminescence (PL) in aliovalent element (Zn<sup>2+</sup>) doped SnO<sub>2</sub> thin films have been investigated using the near edge X-ray absorption fine structure (NEXAFS) spectroscopy, PL spectroscopy, UV–visible absorption spectroscopy, and X-ray diffraction (XRD). The crystallite increases and the bandgap energy decreases with increasing the annealing temperature. Sn M<sub>5,4</sub> edge and Zn L<sub>3,2</sub>-edge NEXAFS spectra have confirmed the Sn<sup>4+</sup> and Zn<sup>2+</sup> ions in thin films. O K-edge NEXAFS spectra convey Sn<img>O6 distortion. Mechanistically, different oxygen vacancies (<span><math><msubsup><mi>V</mi><mi>O</mi><mn>0</mn></msubsup></math></span>, <span><math><msubsup><mi>V</mi><mi>O</mi><mrow><mo>+</mo><mn>1</mn></mrow></msubsup></math></span> and <span><math><msubsup><mi>V</mi><mi>O</mi><mrow><mo>+</mo><mn>2</mn></mrow></msubsup></math></span>) induced PL intensification has been discussed.</div></div>","PeriodicalId":273,"journal":{"name":"Chemical Physics Letters","volume":"877 ","pages":"Article 142285"},"PeriodicalIF":2.8000,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Physics Letters","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0009261425004257","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Connections among the metal‑oxygen octahedra distortions, electronic structure perturbation and origin of photoluminescence (PL) in aliovalent element (Zn2+) doped SnO2 thin films have been investigated using the near edge X-ray absorption fine structure (NEXAFS) spectroscopy, PL spectroscopy, UV–visible absorption spectroscopy, and X-ray diffraction (XRD). The crystallite increases and the bandgap energy decreases with increasing the annealing temperature. Sn M5,4 edge and Zn L3,2-edge NEXAFS spectra have confirmed the Sn4+ and Zn2+ ions in thin films. O K-edge NEXAFS spectra convey SnO6 distortion. Mechanistically, different oxygen vacancies (, and ) induced PL intensification has been discussed.
期刊介绍:
Chemical Physics Letters has an open access mirror journal, Chemical Physics Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Chemical Physics Letters publishes brief reports on molecules, interfaces, condensed phases, nanomaterials and nanostructures, polymers, biomolecular systems, and energy conversion and storage.
Criteria for publication are quality, urgency and impact. Further, experimental results reported in the journal have direct relevance for theory, and theoretical developments or non-routine computations relate directly to experiment. Manuscripts must satisfy these criteria and should not be minor extensions of previous work.