Zexun Pan , Jiayi Zhang , Lei Zhang , Huili Wei , Wei Tang , Liangyou Lin , Heming Deng , Peng Fan , Jingwen Qian , Jinhua Li
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引用次数: 0
Abstract
Due to the low-cost in manufacturing and good compatibility with flexible substrate, lead sulfide quantum dots (PbS QDs) are increasingly regarded as a promising active material candidate for next-generation near-infrared (NIR) photodetectors. In this study, a highly sensitive phototransistor of composite film of PbS QDs and ZnO are demonstrated through combining the excellent light absorption properties of PbS QDs with the high carrier mobility of ZnO. The PbS QDs /ZnO hybrid phototransistors exhibits an ultrahigh responsivity (R) of 1.87 × 102 A/W and detectivity (D⁎) of 2.81 × 1012 Jones under 1550 nm NIR illumination. Furthermore, a 3 × 3 phototransistor array is successfully fabricated to demonstrate their potential of applications in NIR image sensor systems. Our research validates the PbS QDs as a possibility for future optoelectronic applications.
期刊介绍:
The Journal of Colloid and Interface Science publishes original research findings on the fundamental principles of colloid and interface science, as well as innovative applications in various fields. The criteria for publication include impact, quality, novelty, and originality.
Emphasis:
The journal emphasizes fundamental scientific innovation within the following categories:
A.Colloidal Materials and Nanomaterials
B.Soft Colloidal and Self-Assembly Systems
C.Adsorption, Catalysis, and Electrochemistry
D.Interfacial Processes, Capillarity, and Wetting
E.Biomaterials and Nanomedicine
F.Energy Conversion and Storage, and Environmental Technologies