Differing impacts of cardiac implantable electronic device leads on tricuspid regurgitation

IF 2.2 Q2 CARDIAC & CARDIOVASCULAR SYSTEMS
Sophie A. Leon MD, Melissa Austin MD, Nayeem Nasher MD, Daler Rahimov MD, Faizaan Siddique, Chitra Parikh MD, Danial Ahmad MD, Vakhtang Tchantchaleishvili MD, Behzad B. Pavri MD
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引用次数: 0

Abstract

Background

Placement of cardiac implantable electronic devices (CIED) with leads that traverse the tricuspid valve is thought to contribute to tricuspid regurgitation (TR). However, there are relatively limited data comparing the impact of different CIED lead types on the incidence and progression of TR. This study sought to quantify the change in TR severity following implantation of CIEDs with different lead types.

Methods

Patient data were collected on individuals with implantable cardioverter defibrillators (ICD), right ventricular-paced pacemakers (RV-PM), and His bundle-paced pacemakers (His-PM) placed by a single provider at a single institution between 2016 and 2019. Patients with extravascular CIED placement or with existing devices undergoing upgrade procedures were excluded. Severity of TR after CIED implantation was compared to baseline TR.

Results

A total of 97 patients receiving CIEDs were analyzed, including 63 with RV-PMs, 23 with ICDs, and 11 with His-PMs. Median patient age was 72 [interquartile range (IQR) 63–81] years, and 44% of patients were female. Echocardiograms were obtained a median of 20 [4–91] days before CIED implantation and 31 [17.9–43.0] months following implantation. Baseline TR grade was comparable between groups (p = 0.65). TR severity significantly worsened after ICD implantation (p = 0.035), RV-PM implantation trended toward worsening TR severity (p = 0.099), and no statistically significant difference was observed after His-PM implantation (p = 0.68).

Conclusion

The effect of CIED leads on TR represents a spectrum related to the type of lead traversing the tricuspid valve.

Abstract Image

心脏植入式电子导联对三尖瓣反流的不同影响
背景:放置导线穿过三尖瓣的心脏植入式电子装置(CIED)被认为会导致三尖瓣反流(TR)。然而,比较不同CIED导联类型对TR发生和进展的影响的数据相对有限。本研究旨在量化不同导联类型CIED植入后TR严重程度的变化。方法收集2016年至2019年在单一机构由单一提供者放置的植入式心律转复除颤器(ICD)、右心室起搏器(RV-PM)和His捆绑起搏器(His- pm)的患者数据。排除血管外放置CIED或现有装置进行升级程序的患者。结果共分析了97例CIED患者,其中63例为rv - pm, 23例为icd, 11例为his - pm。患者年龄中位数为72岁[四分位间距(IQR) 63-81]岁,女性占44%。超声心动图摄于CIED植入前20[4-91]天,植入后31[17.9-43.0]个月。两组间基线TR分级具有可比性(p = 0.65)。ICD植入后TR严重程度明显加重(p = 0.035), RV-PM植入后TR严重程度有加重趋势(p = 0.099),而His-PM植入后TR严重程度无统计学差异(p = 0.68)。结论CIED导联对TR的影响与导联穿过三尖瓣的类型有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Arrhythmia
Journal of Arrhythmia CARDIAC & CARDIOVASCULAR SYSTEMS-
CiteScore
2.90
自引率
10.00%
发文量
127
审稿时长
45 weeks
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