Impact of PCB Parasitic Capacitance on Switching Transients in Chopper and Half-Bridge Configurations Utilizing TO-247 SiC Devices

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Abdul Basit Mirza;Andrew Castiblanco;Abdul Muneeb;Yang Xie;Sama Salehi Vala;Fang Luo
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Abstract

Silicon Carbide (SiC) MOSFETs and Schottky diodes in the TO-247 package are economical options for chopper (buck/boost) and half-bridge configurations, which are fundamental building blocks for various power converter topologies. However, the fast switching of SiC implies high $\text{d}\boldsymbol{v}/\text{d}\boldsymbol{t}$ and $\text{d}\boldsymbol{i}/\text{d}\boldsymbol{t}$, imposing a constraint on the PCB portion of power loop inductance in minimizing voltage overshoot during the turn-OFF transient. Although the vertical PCB power loop layout effectively reduces the PCB loop inductance, it increases the PCB parasitic capacitance. Due to the considerable lead inductance of the TO-247 package, this PCB capacitance is paralleled to the device's output capacitance through the package lead inductance, altering the switching transient. This article analyzes the effect of PCB capacitance on turn-OFF switching transient and ringing in chopper and half-bridge configurations with SiC devices in the TO-247 package. Initially, small-signal models incorporating PCB capacitance are derived. Subsequently, these models are validated in the frequency domain, and the switching transients are compared through double pulse test (DPT) on two PCB prototypes with the same layout but different stack-ups, yielding different PCB capacitances. Further, a comparative study of the proposed models with direct parallel approximation of PCB and device output capacitance is presented. Finally, the proposed small-signal models are analyzed to establish criteria, in terms of TO-247 lead and PCB loop inductance, for minimizing the impact of PCB capacitance on switching transients.
基于TO-247 SiC器件的斩波和半桥结构中PCB寄生电容对开关瞬态的影响
TO-247封装中的碳化硅(SiC) mosfet和肖特基二极管是斩波器(降压/升压)和半桥配置的经济选择,这是各种功率转换器拓扑的基本构建模块。然而,SiC的快速开关意味着高$\text{d}\boldsymbol{v}/\text{d}\boldsymbol{t}$和$\text{d}\boldsymbol{i}/\text{d}\boldsymbol{t}$,这对电源环路电感的PCB部分施加了限制,以最小化关断瞬态期间的电压过调。垂直PCB电源环路布局虽然有效降低了PCB环路电感,但增加了PCB寄生电容。由于to -247封装的引线电感相当大,该PCB电容通过封装引线电感与器件的输出电容并联,从而改变开关瞬态。本文分析了在TO-247封装的SiC器件斩波和半桥配置中,PCB电容对关断开关瞬态和振铃的影响。首先,推导了包含PCB电容的小信号模型。随后,在频域上对这些模型进行了验证,并通过双脉冲测试(DPT)在两个布局相同但堆叠不同的PCB原型上比较了开关瞬态,产生了不同的PCB电容。此外,还对PCB和器件输出电容直接并行逼近的模型进行了比较研究。最后,对所提出的小信号模型进行分析,以建立基于to -247引线和PCB环路电感的准则,以最小化PCB电容对开关瞬态的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Industry Applications
IEEE Transactions on Industry Applications 工程技术-工程:电子与电气
CiteScore
9.90
自引率
9.10%
发文量
747
审稿时长
3.3 months
期刊介绍: The scope of the IEEE Transactions on Industry Applications includes all scope items of the IEEE Industry Applications Society, that is, the advancement of the theory and practice of electrical and electronic engineering in the development, design, manufacture, and application of electrical systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; industry leadership in energy conservation and environmental, health, and safety issues; the creation of voluntary engineering standards and recommended practices; and the professional development of its membership.
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