{"title":"A 1st-Order NS-SAR⋅ADC With DCMS Switching Scheme for Smart Consumer Electronics Device","authors":"Xin Xin;Yuchen Li;Shimei Zhao;Dingyu Sun;Xingyuan Tong","doi":"10.1109/TCE.2025.3559687","DOIUrl":null,"url":null,"abstract":"A novel Dual-Capacitor Merge-and-Split (DCMS) capacitor switching scheme is proposed for a Noise-Shaping (NS) Successive-Approximation-Register Analog-to-Digital-Converter (SAR ADC) for smart consumer electronics device. In comparison to the <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula>-based method, the proposed DCMS scheme significantly decreases the average switching energy by 93.7%, while optimizing integral and differential non-linearity by factors of <inline-formula> <tex-math>$\\surd 3$ </tex-math></inline-formula>/<inline-formula> <tex-math>$4\\times $ </tex-math></inline-formula> and <inline-formula> <tex-math>$\\surd 1$ </tex-math></inline-formula>/<inline-formula> <tex-math>$2\\times $ </tex-math></inline-formula>, respectively. By employing only <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula> reference, the DCMS scheme can avoid the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> generation circuit and mismatch between the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula> compared to the tri-level or multiple-level switching schemes. Moreover, it maintains a stable common-mode output voltage, simplifying comparator design by aiding in dynamic offset suppression. A <inline-formula> <tex-math>$1{^{\\text {st}}}$ </tex-math></inline-formula>-order NS-SAR ADC is implemented with the proposed DCMS scheme in a 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process. Measurement results indicate it can achieve a Signal-to-Noise-and-Distortion Ratio (SNDR) of 66.5 dB with a power consumption of <inline-formula> <tex-math>$19.22~\\mu $ </tex-math></inline-formula>W from a 1-V supply, at a sampling rate of 1 MS/s. This yields a Schreier Figure-of-Merit (FoMs) of 161.6 dB and a Walden Figure-of-Merit (FoMw) of 89.28 fJ/conversion-step.","PeriodicalId":13208,"journal":{"name":"IEEE Transactions on Consumer Electronics","volume":"71 1","pages":"1298-1306"},"PeriodicalIF":4.3000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Consumer Electronics","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10962186/","RegionNum":2,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A novel Dual-Capacitor Merge-and-Split (DCMS) capacitor switching scheme is proposed for a Noise-Shaping (NS) Successive-Approximation-Register Analog-to-Digital-Converter (SAR ADC) for smart consumer electronics device. In comparison to the $V_{\mathrm { cm}}$ -based method, the proposed DCMS scheme significantly decreases the average switching energy by 93.7%, while optimizing integral and differential non-linearity by factors of $\surd 3$ /$4\times $ and $\surd 1$ /$2\times $ , respectively. By employing only $V_{\mathrm { cm}}$ reference, the DCMS scheme can avoid the $V_{ref}$ generation circuit and mismatch between the $V_{ref}$ and $V_{\mathrm { cm}}$ compared to the tri-level or multiple-level switching schemes. Moreover, it maintains a stable common-mode output voltage, simplifying comparator design by aiding in dynamic offset suppression. A $1{^{\text {st}}}$ -order NS-SAR ADC is implemented with the proposed DCMS scheme in a 0.18-$\mu $ m CMOS process. Measurement results indicate it can achieve a Signal-to-Noise-and-Distortion Ratio (SNDR) of 66.5 dB with a power consumption of $19.22~\mu $ W from a 1-V supply, at a sampling rate of 1 MS/s. This yields a Schreier Figure-of-Merit (FoMs) of 161.6 dB and a Walden Figure-of-Merit (FoMw) of 89.28 fJ/conversion-step.
期刊介绍:
The main focus for the IEEE Transactions on Consumer Electronics is the engineering and research aspects of the theory, design, construction, manufacture or end use of mass market electronics, systems, software and services for consumers.