Stéphanie Jublot-Leclerc , Gabriel Bouhali , Antoine Combrisson , Florian Pallier , Ludovic Largeau , Aurélie Gentils
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引用次数: 0
Abstract
The effects of 1) crystalline quality, and 2) radiation-induced pre-existing damage, on the microstructural modifications induced by ion implantation into single crystalline AlN layers were investigated in dedicated experiments. The native dislocations do not have any visible effect on the microstructural changes induced by implantation when point defect recombination is important. They are however shown to considerably reduce the elastic strain, and thus the quantity of point defects, when implantation-induced extended defects are formed. Moreover, an experiment of He implantation performed at 550°C in a material previously damaged by Al implantation is shown to induce the amorphization of an extended surface layer in the material of lower crystalline quality only. This phenomenon apparently results from the combination of several factors, including the combined influence of native dislocations and of a dense network of extended defects created by pre-implantation on the migration and accumulation of point defects at the surface.
期刊介绍:
The Journal of the European Ceramic Society publishes the results of original research and reviews relating to ceramic materials. Papers of either an experimental or theoretical character will be welcomed on a fully international basis. The emphasis is on novel generic science concerning the relationships between processing, microstructure and properties of polycrystalline ceramics consolidated at high temperature. Papers may relate to any of the conventional categories of ceramic: structural, functional, traditional or composite. The central objective is to sustain a high standard of research quality by means of appropriate reviewing procedures.