Design and Optimization of Inverted Perovskite Solar Cells incorporating Metal Oxide‐based Transparent Conductor

Abstract

Inverted perovskite solar cells (I‐PvSCs) utilizing inexpensive and stable inorganic metal oxide‐based hole transporting layers can reach higher power conversion efficiencies with low hysteresis. In this study, an oxide‐metal‐oxide (OMO) stack is proposed as a transparent conductor (TC) for I‐PvSCs with the overcoat oxide material chosen in such a way that it also acts as a hole transport material (HTL) for the device. The proposed OMO acts as both TC and HTL for the I‐PvSCs device. Using optical simulations based on the transfer matrix method, the OMO stack for maximum average visible transmittance (AVT) and short‐circuit current density (JSC) is optimized. Four different OMO combinations are investigated, with NiO as a fixed overcoat oxide layer due to its hole‐transporting properties. When simulated with a simultaneous variation of up to four different layers, the ZnO/Ag/NiO stack produces the highest AVT (90.24%), while TiO2/Ag/NiO incorporated device attained a best JSC of 23 mAcm⁻2. A detailed optical study has been conducted to understand the results, including wavelength‐dependent field distribution within the stack. This study presents optimized OMO designs that can effectively substitute ITO in inverted perovskite solar cells.