Charge Transport at Atomic Scales in 1D-Semiconductors: A Quantum Statistical Model Allowing Rigorous Numerical Studies.

ArXiv Pub Date : 2025-06-06
Roisin Dempsey Braddell, Jone Uria-Albizuri, Jean-Bernard Bru, Serafim Rodrigues
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引用次数: 0

Abstract

There has been a recent surge of interest in understanding charge transport at atomic scales. The motivations are myriad, including understanding the conductance properties of peptides measured experimentally. In this study, we propose a model of quantum statistical mechanics which aims to investigate the transport properties of 1D-semiconductor at nanoscales. The model is a two-band Hamiltonian in which electrons are assumed to be quasi-free. It allows us to investigate the behaviour of current and quantum fluctuations under the influence of numerous parameters, showing the response with respect to varying voltage, temperature and length. We compute the current observable at each site and demonstrate the local behaviour generating the current.

一维半导体原子尺度上的电荷输运:一个允许严格数值研究的量子统计模型。
最近,人们对理解原子尺度上的电荷输运产生了浓厚的兴趣。动机是无数的,包括理解实验测量肽的电导特性。在这项研究中,我们提出了一个量子统计力学模型,旨在研究一维半导体在纳米尺度上的输运性质。该模型是一个双波段哈密顿量,其中电子被假定为准自由的。它使我们能够研究在众多参数影响下电流和量子波动的行为,显示对不同电压,温度和长度的响应。我们计算每个站点的可观察电流,并演示产生电流的本地行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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