Thermo-electrical analysis of joule heating effects at grain boundaries during field-assisted sintering of yttria-doped ceria

IF 5.6 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Junyoung Chae , Robert Mücke , Payam Kaghazchi , Olivier Guillon , Heung Nam Han
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Abstract

This study investigates the role of local microscopic Joule heating at grain boundaries in the enhanced sintering behaviour of ceria under moderate electric fields. While fields as low as 10 V/cm are known to significantly accelerate sintering, the underlying mechanism remains unclear. Three potential factors have been proposed: macroscopic Joule heating (previously ruled out), local Joule heating at grain boundaries, and direct field-induced modifications of grain boundary structures enhancing diffusion. Focusing on the second hypothesis, thermo-electrical finite element (FE) simulations were conducted for a realistic microstructure of 10 mol% yttria-doped ceria (YDC) at 1208 °C under a field strength of 14 V/cm, incorporating appropriate grain boundary properties. The simulations revealed that power dissipation at grain boundaries is minimal (∼0.1 W/mm³), resulting in negligible local temperature rises (<0.1 K). These findings exclude microscopic Joule heating as a significant contributor to the field-enhanced sintering of ceria.

Abstract Image

场助烧结掺钇铈晶界焦耳热效应的热电分析
本文研究了在中等电场作用下,晶界处局部微观焦耳加热在增强二氧化铈烧结性能中的作用。虽然已知低至10 V/cm的电场会显著加速烧结,但潜在的机制尚不清楚。提出了三个潜在的因素:宏观焦耳加热(以前排除),晶界局部焦耳加热,以及直接场诱导的晶界结构改变增强扩散。针对第二种假设,在1208℃下,在14 V/cm场强下,对10mol %钇掺杂的铈(YDC)进行了热电有限元模拟,得到了具有合适晶界特性的真实微观结构。模拟结果表明,晶界处的功耗最小(~ 0.1 W/mm³),导致局部温升可以忽略不计(<0.1 K)。这些发现排除了微观焦耳加热作为场增强烧结铈的重要贡献者。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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