Tunable TCR and Thermoelectric Performance of CoCrFeNiTi High-Entropy Alloy Thin Films Fabricated by Magnetron Sputtering

Results in Surfaces and Interfaces Pub Date : 2025-05-28 DOI:10.1016/j.rsurfi.2025.100570

Maksim Poliakov , Evgeniya Chernyshova , Dmitry Moskovskikh , Dmitry Kovalev , Philipp Kiryukhantsev-Korneev , Sergey Volodko , Fedor Bochkanov , Kirill Kuskov , Lidiya Volkova , Maksim Krasilnikov , Andrey Orlov , Dmitry Karpenkov , Alexander Rogachev

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Abstract

CoCrFeNiTi high-entropy alloy (HEA) thin films were prepared on Si/SiO₂ substrate by DC magnetron sputtering from one target of Co_0.22Cr_0.23Fe_0.29Ni_0.2Ti_0.06 composition. The influence of sputtering time and power on the morphology, structure, chemical composition, resistivity, and temperature coefficient of resistance (TCR) has been studied. The thin films of the CoCrFeNiTi alloy exhibit a wide range of properties that can be tailored by adjusting the deposition parameters. The films demonstrate tunable TCR. The best TCR of 2.7 ± 0.8 ppm/°C has been achieved. In addition, a head-to-head comparison with state-of-the-art thin-film resistor materials (NiCr, TaN, and HEA analogues) is presented for the first time. The study of the thermoelectric properties of the obtained films revealed a highest power factor (PF) value of ∼0.015 mW/(m· °C²) and a linear behavior of PF increase in the range from −196 to 200 °C.

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磁控溅射制备CoCrFeNiTi高熵合金薄膜的可调TCR和热电性能

以Co0.22Cr0.23Fe0.29Ni0.2Ti0.06为靶材，采用直流磁控溅射法制备了CoCrFeNiTi高熵合金（HEA）薄膜。研究了溅射时间和功率对镀层形貌、结构、化学成分、电阻率和电阻温度系数的影响。CoCrFeNiTi合金的薄膜表现出广泛的性能，可以通过调整沉积参数来定制。影片展示了可调节的TCR。最佳TCR为2.7±0.8 ppm/°C。此外，还首次与最先进的薄膜电阻器材料（NiCr， TaN和HEA类似物）进行了正面比较。热电性能的研究表明，所得薄膜的最高功率因数（PF）值为~ 0.015 mW/（m·°C²），并且在- 196 ~ 200°C范围内PF呈线性增长。

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来源期刊

Results in Surfaces and Interfaces

CiteScore

2.70

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0.00%

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