Photoelectric simulation of perovskite solar cells based on two inverted pyramid structures

Abstract

The reduction of the optical and electrical losses in perovskite solar cells (PSCs) is pivotal to enhancing their overall efficiency. According to the light trapping effect and the enhancement of electron transport capacity, we propose a perovskite solar cell based on two inverted pyramid structures through numerical simulation. The etching of inverted pyramids in fluorine doped SnO₂ (FTO) layer structure is a strategy employed to enhance the absorption of perovskite solar light, thereby optimizing the photoelectric performance of the cell. The TiO₂ inverted pyramid structure was introduced beneath the electron transport layer TiO₂, thereby altering the contact interface between the light absorption layer CH₃NH₃PbI₃ and the electron transport layer. This modification resulted in an increased contact area and enhanced electron transport capability. Furthermore, a comparative analysis was conducted on the photoelectric characteristics of PSCs with planar type, only TiO₂ inverted pyramid structure, only FTO etching inverted pyramid structure, and PSCs with both inverted pyramid structures. The results of this study indicate that the cell with these two inverted pyramid structures exhibits optimal photoelectric performance, characterized by a maximum short-circuit current density of 23.81 mA/cm², a power conversion efficiency of 19.73 %, and an overall thickness of 1200 nm. These findings offer valuable insights for the subsequent design of high-performance PSCs.