Sergi Pérez-Escudero, David Codony, Irene Arias, Sonia Fernández-Méndez
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引用次数: 0
Abstract
The drift-diffusion formulation, modelling semiconductor materials in terms of carrier densities and electric potential, is considered together with an alternative formulation in terms of dimensionless logarithmic quantities. Stability of both formulations in presence of sharp variations with a Galerkin Finite Element discretisation is assessed in two realistic problems: a p-n junction and an n-MOSFET device. The robustness with respect to the initial guess and the computational efficiency of the Newton-Raphson and Gummel non-linear solvers are also compared.
期刊介绍:
The journal reports original research of scholarly value in computational engineering and sciences. It focuses on areas that involve and enrich the application of mechanics, mathematics and numerical methods. It covers new methods and computationally-challenging technologies.
Areas covered include method development in solid, fluid mechanics and materials simulations with application to biomechanics and mechanics in medicine, multiphysics, fracture mechanics, multiscale mechanics, particle and meshfree methods. Additionally, manuscripts including simulation and method development of synthesis of material systems are encouraged.
Manuscripts reporting results obtained with established methods, unless they involve challenging computations, and manuscripts that report computations using commercial software packages are not encouraged.