Influence of lattice aligned quantum barrier architecture with alleviated Mg-doped region in laser diode structure for underwater communication

Abstract

In this paper, we suggest changing the indium composition at regular intervals in three successive quantum barriers to eliminate crystalline miss-orientation and obtain a highly efficient InGaN-based laser diode for underwater communication. The research investigates the influence of indium nitride molar composition on three consecutive quantum barriers in a device construction with an alleviated Mg-doped region to reduce lattice misorientation. Laser power has increased from 188mW to 349 mW in suggested laser diode structures compared to the reference structure at an injection current density of 11 kA/cm², with a decrease in threshold current from 31mA to 19 mA, making them appropriate for low absorption applications. These findings are supported by the optical and carrier confinement analyses described in the next sections.