{"title":"Specialized Rectangular Mask Pattern Design to Neutralize Charging Effects","authors":"Peng Zhang","doi":"10.3103/S0027134925700213","DOIUrl":null,"url":null,"abstract":"<p>In order to achieve a high-quality transfer of the mask pattern onto the substrate in plasma etching, it is important to minimize charging effects. This study investigates the potential use of a specialized design for rectangular mask holes to counteract charging effects. The research examines the behavior of a single and deformed rectangular mask hole with varying length-to-width ratios and two types of mask arrays. A particle simulation program was utilized to analyze the changes in electric field distribution and simulated opening during etching time. The findings indicate that ions tend to bombard the long side rather than the short side or vertexes, leading to flattening of deformed sides and resulting in an approximately rectangular etched opening. Specialized designs based on specific arrays can aid in achieving nearly perfect rectangular etched openings, with potential underlying mechanisms extensively discussed in this study. These results offer valuable insights into specialized design strategies for plasma etching processes.</p>","PeriodicalId":711,"journal":{"name":"Moscow University Physics Bulletin","volume":"80 1","pages":"134 - 140"},"PeriodicalIF":0.4000,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Moscow University Physics Bulletin","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.3103/S0027134925700213","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In order to achieve a high-quality transfer of the mask pattern onto the substrate in plasma etching, it is important to minimize charging effects. This study investigates the potential use of a specialized design for rectangular mask holes to counteract charging effects. The research examines the behavior of a single and deformed rectangular mask hole with varying length-to-width ratios and two types of mask arrays. A particle simulation program was utilized to analyze the changes in electric field distribution and simulated opening during etching time. The findings indicate that ions tend to bombard the long side rather than the short side or vertexes, leading to flattening of deformed sides and resulting in an approximately rectangular etched opening. Specialized designs based on specific arrays can aid in achieving nearly perfect rectangular etched openings, with potential underlying mechanisms extensively discussed in this study. These results offer valuable insights into specialized design strategies for plasma etching processes.
期刊介绍:
Moscow University Physics Bulletin publishes original papers (reviews, articles, and brief communications) in the following fields of experimental and theoretical physics: theoretical and mathematical physics; physics of nuclei and elementary particles; radiophysics, electronics, acoustics; optics and spectroscopy; laser physics; condensed matter physics; chemical physics, physical kinetics, and plasma physics; biophysics and medical physics; astronomy, astrophysics, and cosmology; physics of the Earth’s, atmosphere, and hydrosphere.