Tuning the electronic and magnetic properties of germanium-substituted armchair and zigzag graphene nanoribbons: A comprehensive DFT investigation

IF 2.9 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY
D.M. Hoat , Vo Khuong Dien , Tri Pham , Quoc Duy Ho , Huynh Anh Huy , Duy Khanh Nguyen , Vo Duy Dat
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Abstract

Substitution is among the effective methods to modify essential properties of graphene nanoribbons (GNRs) allowing them to be adaptive to a wide range of applications. In this study, the spin-polarized DFT calculations were performed to discover the structural, electronic, and magnetic properties of 7AGNR and 6ZGNR systems under different germanium substitutions. The critical concentrations and positions of Ge adatoms are considered by investigating different configurations. The systematic calculations and subsequent analysis provided a comprehensive framework for establishing the structure-property relationship. Importantly, the mechanisms responsible for this relationship were also determined, where Ge adatoms play important roles in the orbital hybridization, charge transfer, and new chemical bonding formation. The properties of 7AGNR and 6ZGNR were significantly altered by germanium substitution. The pristine 7AGNR has a bandgap of 1.57 eV, which can vary from 0.58 to 1.96 eV depending on the concentration and distribution of Ge adatom. Meanwhile, its nonmagnetic character is preserved. The 6ZGNR system, on the other hand, displays spin-splitting bandgap of 0.53 eV making it be a unique antiferromagnetic semiconductor. A single germanium atom substitution in 6ZGNR induces a ferromagnetic semi-metallic state with a magnetic moment ranging from −0.02 to −0.21 μB, whereas complete (100 %) germanium substitution yields a ferromagnetic semiconducting state with a magnetic moment of −0.03 μB. The mechanisms by which Ge adatoms modify the fundamental properties of 1D GNR systems can serve as a reference for investigating and tailoring the properties of other 1D systems for advanced applications.

Abstract Image

调整锗取代扶手椅和之字形石墨烯纳米带的电子和磁性:一项全面的DFT研究
取代是改变石墨烯纳米带(gnr)基本特性的有效方法之一,使其能够适应广泛的应用。本研究通过自旋极化DFT计算,发现了不同锗取代下7AGNR和6ZGNR体系的结构、电子和磁性能。通过对不同构型的研究,考虑了锗原子的临界浓度和位置。系统的计算和后续的分析为建立结构-性能关系提供了一个全面的框架。重要的是,这种关系的机制也被确定,其中锗原子在轨道杂化,电荷转移和新的化学键形成中发挥重要作用。锗取代显著改变了7AGNR和6ZGNR的性能。原始的7AGNR的带隙为1.57 eV,根据锗原子的浓度和分布,带隙在0.58 ~ 1.96 eV之间变化。同时,它的非磁性也得以保留。另一方面,6ZGNR系统显示0.53 eV的自旋分裂带隙,使其成为一种独特的反铁磁半导体。在6ZGNR中,单个锗原子取代产生磁矩为−0.02 ~−0.21 μB的铁磁半金属态,而完全(100%)锗取代产生磁矩为−0.03 μB的铁磁半导体态。锗原子改变一维GNR系统基本性质的机制可以作为研究和调整其他一维系统的高级应用性质的参考。
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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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