A Method for Simultaneously Monitoring Gate Leakage Current and Threshold Voltage of SiC Power MOSFETs Under Repetitive Short-Circuit Stress

IF 7.2 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Transportation Electrification Pub Date : 2025-05-02 DOI:10.1109/tte.2025.3566542

Y. Q. Chen, W. F. Li, Z. J. Li, B. Hou, Z. H. Wu, B. Li

引用次数: 0

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重复短路应力下SiC功率mosfet栅极漏电流和阈值电压的同时监测方法

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来源期刊

IEEE Transactions on Transportation Electrification Engineering-Electrical and Electronic Engineering

CiteScore

12.20

自引率

15.70%

发文量

449

期刊介绍： IEEE Transactions on Transportation Electrification is focused on components, sub-systems, systems, standards, and grid interface technologies related to power and energy conversion, propulsion, and actuation for all types of electrified vehicles including on-road, off-road, off-highway, and rail vehicles, airplanes, and ships.