Chip Implementation of Two New VCII-Based Voltage/Transimpedance-Mode KHN-Equivalent Biquads

IF 3.4 3区 计算机科学 Q2 COMPUTER SCIENCE, INFORMATION SYSTEMS
Hua-Pin Chen;San-Fu Wang;Ming-Jin-Yu;Liang-Yen Chen;Yu-Hsi Chen
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引用次数: 0

Abstract

This paper presents two new VCII-based Kerwin-Huelsman-Newcomb (KHN) equivalent biquad circuits, each comprising three second-generation voltage conveyors (VCIIs), two grounded capacitors, and five resistors. Either voltage mode (VM) or trans-impedance mode (TIM) can operate in each proposed circuit configuration. Transfer function analysis using a VM inverting bandpass (IBP) filter yields two additional non-inverting/inverting KHN biquad transfer functions for the two proposed VM/TIM KHN-equivalent biquads. The first proposed VM/TIM KHN-equivalent biquad can simultaneously implement an IBP filter, a non-inverting low-pass (NLP) filter, and an inverting high-pass (IHP) filter. In contrast, the second proposed VM/TIM KHN-equivalent biquad can simultaneously implement an IBP filter, an inverting low-pass (ILP) filter, and a non-inverting high-pass (NHP) filter. Each proposed VM/TIM KHN-equivalent biquad features three low-impedance voltage outputs in the designed circuit, eliminating the need for additional voltage buffers (VBs) in the circuit measurements. The two proposed KHN-equivalent biquads are integrated into a single chip, occupying a total area of 1.44 mm2. This technology uses the TSMC $0.18~\mu $ m 1P6M CMOS process, with the chip operating at a supply voltage of ±0.9 V. The measured power dissipation of the first KHN-equivalent biquad is 2.7 mW, while the measured power dissipation of the second one is 3.24 mW. The measured spurious-free dynamic range (SFDR) of the first KHN-equivalent biquad is 41.18 dBc, while the measured SFDR of the second one is 40.94 dBc. With an input voltage of 1.2 Vpp, the measured total harmonic distortion (THD) values for both KHN-equivalent biquads are below 1 %. The proposed two KHN-equivalent biquads have the advantages of high density, system integration, efficiency, low cost, low power consumption, and effective utilization of chip layout area. Simulations and on-chip measurements are carried out for both KHN-equivalent biquads to validate the theoretical design and demonstrate their on-chip feasibility.
两种新型基于vcii的电压/跨阻抗模式khn等效双电路的芯片实现
本文提出了两个新的基于vcii的kerwen - huelsman - newcomb (KHN)等效双电路,每个电路由三个第二代电压传送带(vcii),两个接地电容器和五个电阻组成。电压模式(VM)或跨阻抗模式(TIM)可以在每个建议的电路配置中工作。使用VM反转带通(IBP)滤波器的传递函数分析产生两个额外的非反转/反转KHN双峰传递函数,用于两个提议的VM/TIM KHN等效双峰。第一个提出的VM/TIM kh等效双电路可以同时实现一个IBP滤波器、一个非反相低通(NLP)滤波器和一个反相高通(IHP)滤波器。相比之下,第二个提出的VM/TIM khn等效双电路可以同时实现一个IBP滤波器、一个反相低通(ILP)滤波器和一个非反相高通(NHP)滤波器。每个建议的VM/TIM khn等效双极电路在设计电路中具有三个低阻抗电压输出,从而消除了电路测量中额外电压缓冲器(VBs)的需要。两个khn等效的biquads集成在一个芯片中,总面积为1.44 mm2。该技术采用台积电0.18~\mu $ m的1P6M CMOS工艺,芯片工作在±0.9 V的电源电压下。第一个等效khn双电源的实测功耗为2.7 mW,第二个等效khn双电源的实测功耗为3.24 mW。第一个等效kh - 4的无杂散动态范围(SFDR)为41.18 dBc,第二个等效kh - 4的SFDR为40.94 dBc。在输入电压为1.2 Vpp的情况下,两种khn等效双极电路的总谐波失真(THD)值均低于1%。所提出的两种khn等效双通道具有高密度、系统集成度高、效率高、成本低、功耗低、有效利用芯片布局面积等优点。仿真和片上测量进行了两个等效的khn双联体,以验证理论设计和证明其片上可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Access
IEEE Access COMPUTER SCIENCE, INFORMATION SYSTEMSENGIN-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
9.80
自引率
7.70%
发文量
6673
审稿时长
6 weeks
期刊介绍: IEEE Access® is a multidisciplinary, open access (OA), applications-oriented, all-electronic archival journal that continuously presents the results of original research or development across all of IEEE''s fields of interest. IEEE Access will publish articles that are of high interest to readers, original, technically correct, and clearly presented. Supported by author publication charges (APC), its hallmarks are a rapid peer review and publication process with open access to all readers. Unlike IEEE''s traditional Transactions or Journals, reviews are "binary", in that reviewers will either Accept or Reject an article in the form it is submitted in order to achieve rapid turnaround. Especially encouraged are submissions on: Multidisciplinary topics, or applications-oriented articles and negative results that do not fit within the scope of IEEE''s traditional journals. Practical articles discussing new experiments or measurement techniques, interesting solutions to engineering. Development of new or improved fabrication or manufacturing techniques. Reviews or survey articles of new or evolving fields oriented to assist others in understanding the new area.
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