{"title":"The two-dimensional n/p type carriers at the interface of LaAlO3/KTaO3 heterostructures","authors":"Yirong Geng, Zuhui Hu, Chang Liu, Ruiling Gao, Hui Zhang, Le Fang, Wei Ren","doi":"10.1039/d5cp00734h","DOIUrl":null,"url":null,"abstract":"This study employs first-principles calculations to investigate the behavior of two-dimensional carriers at the interfaces and surfaces of polar/polar LaAlO3/KTaO3 (LAO/KTO) heterostructures. Unlike the traditional LaAlO3/SrTiO3 (LAO/STO) polar/nonpolar heterostructures with LaAlO3 unit-cell thickness-dependent critical conductive behavior, the LaAlO3/KTaO3 heterostructures are demonstrated to have intrinsic two-dimensional carriers with carrier concentrations reaching up to 1014 cm-2, significantly higher than those observed in LaAlO3/SrTiO3 systems. Furthermore, in contrast to traditional sandwich heterostructure models, the single-interface LaAlO3/KTaO3 heterostructures exhibit no bandgap dependence on the LaAlO3 thickness. These phenomena arise from the bipolar characteristics of the LaAlO3/KTaO3 system, and it can introduce increased carrier density and reduce symmetry within the single-interface polar heterostructure. Simulation results also show that applying in-plane strain can suppress and even reverse the n/p-type of two-dimensional carriers at the interfaces. Additionally, the presence of oxygen vacancies enhances carrier accumulation by redistributing the internal polarization field of the heterostructures. Overall, this research offers a comprehensive elucidation of the behaviors and formation mechanisms for n/p-type two-dimensional carriers in polar/polar LaAlO3/KTaO3 heterostructures and provides potential strategies for manipulating these two-dimensional carriers in relevant materials and devices","PeriodicalId":99,"journal":{"name":"Physical Chemistry Chemical Physics","volume":"42 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Chemistry Chemical Physics","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d5cp00734h","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This study employs first-principles calculations to investigate the behavior of two-dimensional carriers at the interfaces and surfaces of polar/polar LaAlO3/KTaO3 (LAO/KTO) heterostructures. Unlike the traditional LaAlO3/SrTiO3 (LAO/STO) polar/nonpolar heterostructures with LaAlO3 unit-cell thickness-dependent critical conductive behavior, the LaAlO3/KTaO3 heterostructures are demonstrated to have intrinsic two-dimensional carriers with carrier concentrations reaching up to 1014 cm-2, significantly higher than those observed in LaAlO3/SrTiO3 systems. Furthermore, in contrast to traditional sandwich heterostructure models, the single-interface LaAlO3/KTaO3 heterostructures exhibit no bandgap dependence on the LaAlO3 thickness. These phenomena arise from the bipolar characteristics of the LaAlO3/KTaO3 system, and it can introduce increased carrier density and reduce symmetry within the single-interface polar heterostructure. Simulation results also show that applying in-plane strain can suppress and even reverse the n/p-type of two-dimensional carriers at the interfaces. Additionally, the presence of oxygen vacancies enhances carrier accumulation by redistributing the internal polarization field of the heterostructures. Overall, this research offers a comprehensive elucidation of the behaviors and formation mechanisms for n/p-type two-dimensional carriers in polar/polar LaAlO3/KTaO3 heterostructures and provides potential strategies for manipulating these two-dimensional carriers in relevant materials and devices
期刊介绍:
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