Modulating Optical Properties through Cation Substitution: Composition-Property Relationships in MI3MIIIP3O9N:Eu2+ (MI=Na, K; MIII=Al, Ga, In)

IF 6.1 1区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR
Nakyung Lee, Justyna Zeler, Gosia Sojka, Eugeniusz Zych, Jakoah Brgoch
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Abstract

Developing phosphors with narrow photoluminescence emission peaks and high chromatic stability holds significant importance in light-emitting diode (LED) display technologies, where a wide color gamut is essential to achieve the Rec. 2020 specifications. This research focuses on the optical properties of a solid solution: MI2.97Eu0.015MIIIP3O9N [MI=Na, K; MIII=Al, (Al0.75Ga0.25), (Al0.5Ga0.5), (Al0.25Ga0.75), Ga, (Ga0.75In0.25), (Ga0.5In0.5)] to understand how the narrow-emitting photoluminescence in K3AlP3O9N:Eu2+ can evolve during host structure cation substitution. Photoluminescence measurements at low temperature (15 K) support that Eu2+ replaces three crystallographically independent Na+ sites in Na2.97Eu0.015AlP3O9N, similar to the parent K+ phosphor, but substituting Ga3+ and In3+ for Al3+ leads to a change in Eu2+ site preference, narrowing the full-width-at-half-maximum (fwhm) of the emission peak. The chromatic stability and photoluminescence quantum yield are also enhanced with higher Ga3+ content in the host but not with In3+. Thermoluminescence analysis indicates the relationship between trap states and the enhanced quantum yield with Ga3+ leads to the series’ best performance. The analysis of the MI2.97Eu0.015MIIIP3O9N series offers insight into the potential method for modulating optical properties with cation substitution in the host structure.
通过阳离子取代调制光学性质:MI3MIIIP3O9N:Eu2+ (MI=Na, K)的组成-性质关系MIII=Al, Ga, In)
开发具有窄光致发光发射峰和高色稳定性的荧光粉在发光二极管(LED)显示技术中具有重要意义,其中宽色域对于实现Rec. 2020规范至关重要。本文研究了一种固溶体的光学性质:MI2.97Eu0.015MIIIP3O9N [MI=Na, K;MIII=Al, (Al0.75Ga0.25), (Al0.5Ga0.5), (Al0.25Ga0.75), Ga, (Ga0.75In0.25), (Ga0.5In0.5)]来了解K3AlP3O9N:Eu2+在宿主结构阳离子取代过程中窄发射光致发光是如何进化的。在低温(15 K)下的光致发光测量支持了Eu2+取代了Na2.97Eu0.015AlP3O9N中三个晶体学独立的Na+位点,类似于母K+荧光粉,但用Ga3+和In3+取代Al3+导致Eu2+位点偏好的变化,缩小了发射峰的半峰全宽(fwhm)。随着主体中Ga3+含量的增加,材料的色稳定性和光致发光量子产率也有所提高,而In3+含量的增加则没有提高。热释光分析表明,加入Ga3+后,阱态与量子产率之间的关系导致了该系列的最佳性能。通过对MI2.97Eu0.015MIIIP3O9N系列的分析,可以深入了解利用主结构中的阳离子取代来调制光学性质的潜在方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Inorganic Chemistry Frontiers
Inorganic Chemistry Frontiers CHEMISTRY, INORGANIC & NUCLEAR-
CiteScore
10.40
自引率
7.10%
发文量
587
审稿时长
1.2 months
期刊介绍: The international, high quality journal for interdisciplinary research between inorganic chemistry and related subjects
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