Magnetic Properties Tuning via Broad Range Site Deficiency in Square Net Material UCuxBi2

IF 14.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Hope A. Long, Daniel Duong, Joanna Blawat, Gregory Morrison, Yan Wu, Huibo Cao, Nabaraj Pokhrel, David S. Parker, John Singleton, Rongying Jin, Vladislav V. Klepov
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引用次数: 0

Abstract

HfCuSi2-type pnictogen compounds have recently been shown to be a versatile platform for designing materials with topologically nontrivial band structures. However, these phases require strict control over the electron count to tune the Fermi level, which can only be achieved in compositions with A2+M2+Pn2 and A3+M+Pn2 (A = lanthanides, M = transition metals, Pn = pnictogens P–Bi) charge distribution. While such lanthanide compounds have been thoroughly studied as candidate magnetic topological materials, their heavy element analogs with uranium and bismuth remain largely underexplored. In this report, we present the synthesis of UCuxBi2 single crystals and study their magnetic properties. Detailed structural analysis revealed that flux-grown crystals always form as a site-deficient UCuxBi2 composition, where x varies between 0.20 and 0.64. Magnetic property measurements revealed a dependence of the magnetic coupling on the Cu site deficiency, linearly changing the Néel temperature from 51 K for UCu0.60Bi2 to 118 K for UCu0.30Bi2. Moreover, higher Cu concentration promotes a metamagnetic transition in highly magnetically anisotropic UCu0.60Bi2 single crystals. We show that DFT calculations can successfully model site deficiency in the UCuxSb2 and UCuxBi2 systems. This work paves the way toward using the site deficiency to tune the Fermi level in more ubiquitous A3+M2+xPn2 phases, which previously have not been considered topological candidate materials due to unfavorable electron count.

Abstract Image

方网材料UCuxBi2的宽范围缺磁调谐
hfcusi2型烟原化合物最近被证明是设计具有拓扑非平凡带结构的材料的通用平台。然而,这些相需要严格控制电子数来调节费米能级,这只能在A2+M2+Pn2和A3+M+Pn2 (A =镧系元素,M =过渡金属,Pn = pnictogens P-Bi)电荷分布的组合物中实现。虽然这些镧系化合物已经作为候选磁性拓扑材料进行了彻底的研究,但它们与铀和铋的重元素类似物在很大程度上仍未得到充分的探索。在本报告中,我们合成了UCuxBi2单晶并研究了其磁性能。详细的结构分析表明,助焊剂生长的晶体总是以缺位的UCuxBi2成分形成,其中x在0.20和0.64之间变化。磁性能测量揭示了磁耦合对Cu缺位的依赖性,并将nsamel温度从UCu0.60Bi2的51 K线性地改变为UCu0.30Bi2的118 K。此外,较高的Cu浓度促进了高磁各向异性UCu0.60Bi2单晶的变磁转变。我们发现DFT计算可以成功地模拟UCuxSb2和UCuxBi2系统中的位点缺失。这项工作为利用位置缺陷来调整更普遍存在的A3+M2+xPn2相的费米能级铺平了道路,由于不利的电子计数,这些相以前没有被认为是拓扑候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
24.40
自引率
6.00%
发文量
2398
审稿时长
1.6 months
期刊介绍: The flagship journal of the American Chemical Society, known as the Journal of the American Chemical Society (JACS), has been a prestigious publication since its establishment in 1879. It holds a preeminent position in the field of chemistry and related interdisciplinary sciences. JACS is committed to disseminating cutting-edge research papers, covering a wide range of topics, and encompasses approximately 19,000 pages of Articles, Communications, and Perspectives annually. With a weekly publication frequency, JACS plays a vital role in advancing the field of chemistry by providing essential research.
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