{"title":"Continuously adjustable metal to insulator transitions within high temperature range for La3-xBixNi2O7 layered perovskite nickelates","authors":"Hao Zhang , Jingxin Gao , Yi Bian , Wei Lei , Hongliang Dong , Xiaoguang Xu , Nuofu Chen , Jikun Chen","doi":"10.1016/j.scriptamat.2025.116720","DOIUrl":null,"url":null,"abstract":"<div><div>Establishing the Ruddlesden-Popper type layered perovskite structures for rare-earth nickelates (e.g., <em>Re</em><sub>n+1</sub>Ni<sub>n</sub>O<sub>3n+1</sub>), by alternatively inserting one <em>Re</em>O rock-salt layer into n layers of the <em>Re</em>NiO<sub>3</sub> perovskite, sheds a light on new freedom to regulate their metal to insulator transition (MIT) properties. Herein, we demonstrate continuously regulatable MITs enabling significantly enhanced resistive switches at high temperature range of 500–560 K for La<sub>3-x</sub>Bi<sub>x</sub>Ni<sub>2</sub>O<sub>7</sub> (n=3), compared to conventional <em>Re</em>NiO<sub>3</sub> with similar critical temperatures (<em>T</em><sub>MIT</sub>). Anomalously small magnitudes in thermopowers are observed for the insulating La<sub>3-x</sub>Bi<sub>x</sub>Ni<sub>2</sub>O<sub>7</sub>, compared to the 113-type nickelates, indicating their distinguished bi-polar transport characters. The Bi substitution results in electron localization as indicated by the near edge X-ray absorption fine structure analysis, and elevates the hole contribution to the transportation to drive the thermopower associated with their insulating phase towards positive magnitudes. Furthermore, compared to <em>Re</em>NiO<sub>3</sub>, the La<sub>3-x</sub>Bi<sub>x</sub>Ni<sub>2</sub>O<sub>7</sub> exhibits higher material stability, paving the way to their applications.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"264 ","pages":"Article 116720"},"PeriodicalIF":5.3000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646225001836","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Establishing the Ruddlesden-Popper type layered perovskite structures for rare-earth nickelates (e.g., Ren+1NinO3n+1), by alternatively inserting one ReO rock-salt layer into n layers of the ReNiO3 perovskite, sheds a light on new freedom to regulate their metal to insulator transition (MIT) properties. Herein, we demonstrate continuously regulatable MITs enabling significantly enhanced resistive switches at high temperature range of 500–560 K for La3-xBixNi2O7 (n=3), compared to conventional ReNiO3 with similar critical temperatures (TMIT). Anomalously small magnitudes in thermopowers are observed for the insulating La3-xBixNi2O7, compared to the 113-type nickelates, indicating their distinguished bi-polar transport characters. The Bi substitution results in electron localization as indicated by the near edge X-ray absorption fine structure analysis, and elevates the hole contribution to the transportation to drive the thermopower associated with their insulating phase towards positive magnitudes. Furthermore, compared to ReNiO3, the La3-xBixNi2O7 exhibits higher material stability, paving the way to their applications.
期刊介绍:
Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.