Predicting CO adsorption sites in Co-doped zeolite via density functional theory calculations

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
M.I. Shilina, I.P. Gloriozov
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Abstract

The interaction of CO with Co/MFI and the structural features of stabilization of extra-framework Co-species in the straight channel of the zeolite were investigated by using density functional theory (DFT) calculations, employing the ωCO/rCO correlation for calculations of CO stretching frequencies. Various locations of two Al atoms are considered depending on the number (from 1 to 4) of silicon atoms separating former atoms. The calculated CO stretching frequencies of 2200-2195 cm−1 found for models with the divalent cobalt cation located near closely spaced Al atoms (k = 1, 2) in 10R-str zeolite channel corresponds most closely to the experimental frequencies. The probability of а stabilization of the divalent cation in models with a distant arrangement of two Al atoms in the straight channel of the MFI is rather low. On the contrary, an isolated arrangement of Al atoms assists the formation of more probable structures of the binuclear CoII-oxo and CoIII-oxo cations. The highest values of the calculated CO stretching frequency (2206-2226 cm−1) correspond to the models with [CoIII-(O2)-CoIII]2+ oxo cation. According to DFT calculations, these CoIII-binuclear clusters are the most likely active sites of redox reactions on Co/MFI catalysts.
用密度泛函理论计算预测共掺杂沸石中CO的吸附位
采用密度泛函理论(DFT)计算方法研究了CO与CO/ MFI的相互作用以及CO/ MFI在沸石直流道中稳定框架外共组分的结构特征,并采用ωCO/rCO相关系数计算CO的拉伸频率。两个Al原子的不同位置取决于分离前一个原子的硅原子的数目(从1到4)。在10R-str分子筛通道中,二价钴离子位于Al原子(k = 1,2)附近,计算得到的CO拉伸频率为2200 ~ 2195 cm−1,与实验频率最接近。在MFI的直通道中,两个Al原子相距较远排列的模型中,二价阳离子的稳定概率很低。相反,Al原子的孤立排列有助于形成双核CoIII-oxo和CoIII-oxo阳离子的更可能结构。计算得到的CO拉伸频率最大值(2206 ~ 2226 cm−1)与[CoIII-(O2)-CoIII]2+氧离子模型相对应。根据DFT计算,这些coiii -双核簇是Co/MFI催化剂上最可能发生氧化还原反应的活性位点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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