{"title":"Change in Luminescent Properties of Diamond Stimulated by Subnanosecond Laser Pulses at Low Temperatures","authors":"S. I. Chentsov, I. I. Usmanov, V. S. Krivobok","doi":"10.3103/S1068335625600020","DOIUrl":null,"url":null,"abstract":"<p>The effect of 532-nm pulsed laser radiation on properties of a single-crystal diamond film containing optically active SiV<sup>‒</sup> centers is studied using in-situ measurements of the photoluminescence spectra at a temperature of 77 K. It is shown that at a pulse duration of 500 ns, the threshold energy density at which the rearrangement of SiV<sup>‒</sup> centers is recorded is ~0.112 J/cm<sup>2</sup>. The rearrangement leads to a decrease in the intensity of the zero-phonon emission line of SiV<sup>‒</sup> centers relative to the intensity of the Raman scattering signal on optical phonons of the diamond matrix. With an increase in the energy density of incident pulses to 0.540 J/cm<sup>2</sup>, the luminescence quenching effect reaches saturation, and traces of ablation and/or graphitization are observed on the film surface. The found effects are explained by local heating of the diamond film due to the processes of three-photon absorption of light, in which the absorption coefficient sharply depends on the energy of incident pulses.</p>","PeriodicalId":503,"journal":{"name":"Bulletin of the Lebedev Physics Institute","volume":"52 3","pages":"107 - 113"},"PeriodicalIF":0.6000,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of the Lebedev Physics Institute","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.3103/S1068335625600020","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of 532-nm pulsed laser radiation on properties of a single-crystal diamond film containing optically active SiV‒ centers is studied using in-situ measurements of the photoluminescence spectra at a temperature of 77 K. It is shown that at a pulse duration of 500 ns, the threshold energy density at which the rearrangement of SiV‒ centers is recorded is ~0.112 J/cm2. The rearrangement leads to a decrease in the intensity of the zero-phonon emission line of SiV‒ centers relative to the intensity of the Raman scattering signal on optical phonons of the diamond matrix. With an increase in the energy density of incident pulses to 0.540 J/cm2, the luminescence quenching effect reaches saturation, and traces of ablation and/or graphitization are observed on the film surface. The found effects are explained by local heating of the diamond film due to the processes of three-photon absorption of light, in which the absorption coefficient sharply depends on the energy of incident pulses.
期刊介绍:
Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.