{"title":"Semiconducting transport properties of graphene doped by metal oxide","authors":"Chang-Soo Park , Heetae Kim","doi":"10.1016/j.ssc.2025.115964","DOIUrl":null,"url":null,"abstract":"<div><div>The band gap research in graphene remains a critical topic for materials applications. Here, we report a band gap opening and p-type semiconducting property of graphene achieved through electrochemical doping on its surface. Manganese-oxide nanoparticles adsorbed on the graphene are used as dopants in an electrolyte, inducing the band gap opening and altering the electronic structure. Additionally, the fabricated graphene FET exhibits p-type semiconductor behavior. The temperature-dependent conductivity of the p-type doped graphene, at an applied potential of 1.5 V during electrochemical doping, indicates the formation of a 0.23 eV band gap, as determined from fitting the conductivity equation. The semiconducting properties of manganese-oxide doped graphene are attributed to the formation of manganese-oxide nanoparticles on the graphene surface.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"402 ","pages":"Article 115964"},"PeriodicalIF":2.1000,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109825001395","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The band gap research in graphene remains a critical topic for materials applications. Here, we report a band gap opening and p-type semiconducting property of graphene achieved through electrochemical doping on its surface. Manganese-oxide nanoparticles adsorbed on the graphene are used as dopants in an electrolyte, inducing the band gap opening and altering the electronic structure. Additionally, the fabricated graphene FET exhibits p-type semiconductor behavior. The temperature-dependent conductivity of the p-type doped graphene, at an applied potential of 1.5 V during electrochemical doping, indicates the formation of a 0.23 eV band gap, as determined from fitting the conductivity equation. The semiconducting properties of manganese-oxide doped graphene are attributed to the formation of manganese-oxide nanoparticles on the graphene surface.
期刊介绍:
Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged.
A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions.
The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.