{"title":"Photoresponse of few-layered GaS0.3Se0.7 alloy transistors","authors":"Peng Chen, Fangqingluan Qiao, Jimin Shang, Lamei Zhang, Zijiong Li, Wen Yang, Shiquan Feng","doi":"10.1007/s40042-025-01297-7","DOIUrl":null,"url":null,"abstract":"<div><p>Efficient bandgap engineering is of great significance for developing high-performance optoelectronic devices. Few-layered GaS photodetectors have shown promising photoresponsivity only with the spectral window in the ultraviolet (UV) region. It is necessary to explore alloying GaS and GaSe to improve the performance of devices. Here, the field-effect transistors (FETs) based on ultrathin layer GaS<sub>0.3</sub>Se<sub>0.7</sub> are designed and fabricated. The results show that few-layered GaS<sub>0.3</sub>Se<sub>0.7</sub> FETs exhibit typical <i>p</i>-type semiconductor properties. Our study shows the photoresponse of few-layered GaS<sub>0.3</sub>Se<sub>0.7</sub> FETs (on SiO<sub>2</sub>/Si) at 405 nm in visible light region is 231 mA/W with an ON/OFF ratio of 140, at a power density of 16.5 mW/cm<sup>2</sup>, an external quantum efficiency of 71%, and a detection rate of 4.08 × 10<sup>11</sup> Jones. The results provide a method to improve the electrical properties of optoelectronic devices based on a 2D material alloy.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 8","pages":"726 - 731"},"PeriodicalIF":0.8000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-025-01297-7","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Efficient bandgap engineering is of great significance for developing high-performance optoelectronic devices. Few-layered GaS photodetectors have shown promising photoresponsivity only with the spectral window in the ultraviolet (UV) region. It is necessary to explore alloying GaS and GaSe to improve the performance of devices. Here, the field-effect transistors (FETs) based on ultrathin layer GaS0.3Se0.7 are designed and fabricated. The results show that few-layered GaS0.3Se0.7 FETs exhibit typical p-type semiconductor properties. Our study shows the photoresponse of few-layered GaS0.3Se0.7 FETs (on SiO2/Si) at 405 nm in visible light region is 231 mA/W with an ON/OFF ratio of 140, at a power density of 16.5 mW/cm2, an external quantum efficiency of 71%, and a detection rate of 4.08 × 1011 Jones. The results provide a method to improve the electrical properties of optoelectronic devices based on a 2D material alloy.
期刊介绍：
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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