Temperature control system based on Active Disturbance Rejection Control and its parameter optimization in large-sized monolithic silicon epitaxy equipment reactor

Abstract

The temperature regulation of large-sized monolithic silicon epitaxial reactors presents a significant technical challenge, primarily attributed to its nonlinearities, significant time delays, and cross-regional coupling interference within the multi-zone heating process. To speed up the heating process while minimizing overshoot, this paper proposes a temperature control system based on Active Disturbance Rejection Control (ADRC). Additionally, this paper proposes a parameter optimization method based on orthogonal experimental design. The ADRC controller's parameters were optimized in the Simulink simulation model, and the controller's performance in temperature control was compared to that of the conventional PID controller following the same parameter optimization. The simulation results demonstrate that under the condition of maintaining overshoot within 1 % of the setting value, the ADRC-based temperature control system achieves stabilization within the ± 1 % error band of the setting value in 53.42 % of the time required by the PID-based temperature control system. Finally, experiments prove that the temperature control system with ADRC controllers can implement precise temperature control and shows good temperature control performance.