Nonzero RMS magnetoresistance yielding control space partition of CrTe2 monolayer

Abstract

The study of magnetic phenomena in low-dimensional systems has largely explored after the discovery of two-dimensional (2D) magnetic materials, such as CrI₃ and Cr₂Ge₂Te₆ in 2017. These materials presents intrinsic magnetic order, overcoming the limitations predicted by the Mermin-Wagner theorem, due to magnetic crystalline anisotropy energy. Among these, CrTe₂, a van der Waals 2D magnet, has gather significant interest due to its in-plane anisotropic magnetoresistance (AMR) and high Curie temperature. This study investigates the magnetic field-regulated resistance of CrTe₂ monolayers in the context of spintronics applications. Utilizing the zigzag-ordered parameters obtained from prior simulations, we examine how external magnetic fields influence resistance states and control the ON/OFF state of nano-devices. The analysis demonstrates that specific magnetic field configurations, particularly those in the form of (0, 0, Bz(ω)), which is out-of-plane directed field, gives a non-zero root mean square resistance, indicating a functional resistance ON state. This provides a novel method for magnetically controlled current regulation in spintronic devices. The experimental results also reveal an interesting spin-flop transition in CrTe₂ under a z-directed magnetic field, leading to y-directional magnetization. This phenomenon, combined with the material’s robust magnetic properties, positions CrTe₂ as a promising candidate for next-generation memory and logic devices. By advancing the understanding of magnetic field manipulation in 2D magnetic materials, this research opens new pathways in the development of energy-efficient spintronics technology.