Analysis of current challenges in the design of low-noise broadband planar amplifiers: Review

Moustapha El Bakkali , Oumaima Douass , Faouzi Rahmani , Said El Khaldi , Naima Amar Touhami
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Abstract

This review article presents a thorough and in-depth analysis of recent advancements in wideband low-noise planar amplifiers (LNAs). It systematically examines the key factors influencing LNA performance and efficiency, providing a detailed quantitative and qualitative evaluation of over 40 relevant studies. The paper assesses the impact of various substrate materials, including FR4 and multiple Roger's substrates (RO 4003c, RT 5880, RO 4350, RO 3003, and RO AD250c), on amplifier characteristics. Additionally, it explores a wide range of bandwidth enhancement techniques and transistor technologies, such as GaAs, InGaAs, GaN, InGaP, and SiGe. By offering a thorough comparative analysis, this work highlights current challenges, proposes practical design recommendations, and serves as a valuable reference for researchers and engineers working on the development of next-generation wideband LNAs.
低噪声宽带平面放大器设计中的挑战分析:综述
本文综述了宽带低噪声平面放大器(LNAs)的最新进展。它系统地审查了影响LNA性能和效率的关键因素,对40多项相关研究进行了详细的定量和定性评估。本文评估了各种衬底材料,包括FR4和多个罗杰衬底(RO 4003c、RT 5880、RO 4350、RO 3003和RO AD250c)对放大器特性的影响。此外,它还探讨了广泛的带宽增强技术和晶体管技术,如GaAs, InGaAs, GaN, InGaP和SiGe。通过提供全面的比较分析,本研究突出了当前的挑战,提出了实用的设计建议,并为致力于开发下一代宽带LNAs的研究人员和工程师提供了有价值的参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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