Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant

Abstract

Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.