Zhiwei Jiao , Aolong Sun , Xufang Zhang , Mulan Mu , Haoran Dong
{"title":"Doping modification and optoelectronic properties of black phosphorus","authors":"Zhiwei Jiao , Aolong Sun , Xufang Zhang , Mulan Mu , Haoran Dong","doi":"10.1016/j.solidstatesciences.2025.107916","DOIUrl":null,"url":null,"abstract":"<div><div>Black phosphorus (BP) has attracted much attention for its excellent electrical and optical properties and its potential in field-effect transistors (FETs). In this work, BP doped with oxygen group elements (sulfur, selenium, and tellurium) was successfully synthesized using the chemical vapor transport method (CVT), and their optoelectronic properties were studied systematically. It is confirmed by X-ray diffraction (XRD) that BP crystals doped with the oxygen group elements exhibited high crystalline quality and yield. Changes in the absorption spectra and surface morphology indicated that doped BP demonstrated significantly enhanced environmental stability compared to undoped BP under prolonged air exposure. Among the doped samples, tellurium (Te)-doped BP showed the highest stability, with a degradation rate of only 9.91 % after 10 days. FETs based on doped BP were successfully fabricated, and their electrical performances were thoroughly evaluated. We found that the hole mobility of BP was dramatically improved by doping, and the selenium (Se)-doped BP possessed the highest hole mobility of 1684.24 cm<sup>2</sup>/V·s.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"163 ","pages":"Article 107916"},"PeriodicalIF":3.4000,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Sciences","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1293255825000949","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
Black phosphorus (BP) has attracted much attention for its excellent electrical and optical properties and its potential in field-effect transistors (FETs). In this work, BP doped with oxygen group elements (sulfur, selenium, and tellurium) was successfully synthesized using the chemical vapor transport method (CVT), and their optoelectronic properties were studied systematically. It is confirmed by X-ray diffraction (XRD) that BP crystals doped with the oxygen group elements exhibited high crystalline quality and yield. Changes in the absorption spectra and surface morphology indicated that doped BP demonstrated significantly enhanced environmental stability compared to undoped BP under prolonged air exposure. Among the doped samples, tellurium (Te)-doped BP showed the highest stability, with a degradation rate of only 9.91 % after 10 days. FETs based on doped BP were successfully fabricated, and their electrical performances were thoroughly evaluated. We found that the hole mobility of BP was dramatically improved by doping, and the selenium (Se)-doped BP possessed the highest hole mobility of 1684.24 cm2/V·s.
期刊介绍:
Solid State Sciences is the journal for researchers from the broad solid state chemistry and physics community. It publishes key articles on all aspects of solid state synthesis, structure-property relationships, theory and functionalities, in relation with experiments.
Key topics for stand-alone papers and special issues:
-Novel ways of synthesis, inorganic functional materials, including porous and glassy materials, hybrid organic-inorganic compounds and nanomaterials
-Physical properties, emphasizing but not limited to the electrical, magnetical and optical features
-Materials related to information technology and energy and environmental sciences.
The journal publishes feature articles from experts in the field upon invitation.
Solid State Sciences - your gateway to energy-related materials.