Gr/HEA-FexNiCrCoCu interface getting excellent thermal transport

Abstract

We try to excavate excellent thermal transport properties with the Gr/HEA-Fe_xNiCrCoCu interface by manipulating Fe atom concentration percentages. The results show that the interfacial thermal conductivity (ITC) increases by 27.9 % when the loading temperature is from 300 K to 700 K, primarily due to the enhanced out-of-plane phonon coupling in the low-frequency region. In contrast, the Fe atom concentration exhibits a linear decrease with ITC, which can be attributed to the reduced phonon participation rate, the enhanced localization feature at the HEA edge, and the lattice distortion effect. This study better explains the thermal transport mechanism at the Gr-based HEA-Fe_xNiCrCoCu heterogeneous interface and finds a highly efficient heat conduction interface for thermal rectifier devices in next-generation microelectronic devices.